OSRAM 1N26 RF Diodes
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1N26 Tech Specifications
| Category | Diodes - RF | |
| Manufacturer | OSRAM | |
| Surface Mount | NO | |
| Diode Element Material | SILICON | |
| Number of Terminals | 2Terminals | |
| Package Description | O-LALF-W2 | |
| Package Style | LONG FORM | |
| Package Body Material | GLASS | |
| Operating Temperature-Max | 70 °C | |
| Manufacturer Part Number | 1N26 | |
| Package Shape | ROUND | |
| Manufacturer | Advanced Semiconductor Inc | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ASI SEMICONDUCTOR INC | |
| Risk Rank | 5.66 | |
| Part Package Code | DO-37 | |
| ECCN Code | EAR99 |
| Additional Feature | MATCHED PAIR | |
| HTS Code | 8541.10.00.60 | |
| Subcategory | Microwave Mixer Diodes | |
| Technology | POINT CONTACT | |
| Terminal Position | AXIAL | |
| Terminal Form | WIRE | |
| Reach Compliance Code | unknown | |
| Pin Count | 2 | |
| JESD-30 Code | O-LALF-W2 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE | |
| Diode Type | MIXER DIODE | |
| Case Connection | ISOLATED | |
| Impedance-Max | 600 Ω | |
| JEDEC-95 Code | DO-37 | |
| Frequency Band | K BAND | |
| Noise Figure-Max | 13.1 dB | |
| Impedance-Min | 300 Ω |
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