NTE Electronics, Inc NTE912 Arrays BJT Transistors
50 mA 15 V
IN STOCK
Min. : 1
Mult. : 1
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NTE912 Tech Specifications
| Category | Transistors - Bipolar (BJT) - Arrays | |
| Manufacturer | NTE ELECT | |
| Mounting Type | Through Hole | |
| Package / Case | 14-DIP (0.300", 7.62mm) | |
| Mount | Through Hole | |
| Surface Mount | NO | |
| Number of Pins | 14Pins | |
| Supplier Device Package | 14-PDIP | |
| Weight | 72.574779 g | |
| Number of Terminals | 14Terminals | |
| Transistor Element Material | SILICON | |
| Mfr | NTE Electronics, Inc | |
| Package | Bag | |
| Product Status | Active | |
| Current-Collector (Ic) (Max) | 50mA | |
| Manufacturer Part Number | NTE912 | |
| Manufacturer | NTE Electronics | |
| ECCN | EAR99 | |
| Itar Registered | No | |
| Collector-Emitter Breakdown Voltage | 24 V | |
| RoHS | Compliant | |
| Package Description | IN-LINE, R-PDIP-T14 | |
| Package Style | IN-LINE | |
| Package Body Material | PLASTIC/EPOXY | |
| Operating Temperature-Max | 150 °C | |
| Rohs Code | Yes | |
| Transition Frequency-Nom (fT) | 550 MHz | |
| Package Shape | RECTANGULAR | |
| Number of Elements | 5 Elements | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | NTE ELECTRONICS INC | |
| Risk Rank | 2.28 | |
| Part Package Code | DIP | |
| Series | - | |
| Operating Temperature | -55°C ~ 125°C (TA) | |
| ECCN Code | EAR99 |
| Max Operating Temperature | 125 °C | |
| Min Operating Temperature | -55 °C | |
| HTS Code | 8541.21.00.75 | |
| Subcategory | Other Transistors | |
| Max Power Dissipation | 750 mW | |
| Terminal Position | DUAL | |
| Terminal Form | THROUGH-HOLE | |
| Reach Compliance Code | unknown | |
| Pin Count | 14 | |
| JESD-30 Code | R-PDIP-T14 | |
| Qualification Status | Not Qualified | |
| Output Voltage | 15 V | |
| Polarity | NPN | |
| Configuration | COMPLEX | |
| Number of Channels | 5Channels | |
| Power - Max | 750mW | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | NPN | |
| Transistor Type | 5 NPN | |
| Collector Emitter Voltage (VCEO) | 15 V | |
| Max Collector Current | 50 mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 1mA, 3V | |
| Current - Collector Cutoff (Max) | 500nA | |
| Vce Saturation (Max) @ Ib, Ic | 230mV @ 1mA, 10mA | |
| Voltage - Collector Emitter Breakdown (Max) | 24V | |
| Transition Frequency | 550 MHz | |
| Frequency - Transition | 550MHz | |
| Collector Base Voltage (VCBO) | 20 V | |
| Emitter Base Voltage (VEBO) | 5 V | |
| Collector Current-Max (IC) | 0.05 A | |
| DC Current Gain-Min (hFE) | 40 | |
| Collector-Emitter Voltage-Max | 15 V | |
| Width | 76.2 mm | |
| Height | 12.7 mm | |
| Length | 152.4 mm | |
| REACH SVHC | Unknown |
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