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LSIC1MO120E0160 Tech Specifications
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Hamlin | |
| Mounting Type | Through Hole | |
| Package / Case | TO-247-3 | |
| Supplier Device Package | TO-247-3 | |
| RoHS | Non-Compliant | |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant | |
| Current - Continuous Drain (Id) @ 25℃ | 22A (Tc) | |
| Other Names | F11005 | |
| Drive Voltage (Max Rds On, Min Rds On) | 20V | |
| Power Dissipation (Max) | 125W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Series | - |
| Packaging | Tube | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Technology | SiCFET (Silicon Carbide) | |
| Cable Length | 228.6 mm | |
| FET Type | N-Channel | |
| Rds On (Max) @ Id, Vgs | 200 mOhm @ 10A, 20V | |
| Vgs(th) (Max) @ Id | 4V @ 5mA | |
| Input Capacitance (Ciss) (Max) @ Vds | 870pF @ 800V | |
| Gate Charge (Qg) (Max) @ Vgs | 57nC @ 20V | |
| Drain to Source Voltage (Vdss) | 1200V | |
| Vgs (Max) | +22V, -6V | |
| FET Feature | - |
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