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LSIC1MO120E0160 Tech Specifications
Category | Transistors - FETs, MOSFETs - Single | |
Manufacturer | Hamlin | |
Package / Case | TO-247-3 | |
Mounting Type | Through Hole | |
Supplier Device Package | TO-247-3 | |
RoHS | Non-Compliant | |
Power Dissipation (Max) | 125W (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 20V | |
Other Names | F11005 | |
Current - Continuous Drain (Id) @ 25℃ | 22A (Tc) | |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant | |
Packaging | Tube | |
Series | - |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Technology | SiCFET (Silicon Carbide) | |
Cable Length | 228.6 mm | |
FET Type | N-Channel | |
Rds On (Max) @ Id, Vgs | 200 mOhm @ 10A, 20V | |
Vgs(th) (Max) @ Id | 4V @ 5mA | |
Input Capacitance (Ciss) (Max) @ Vds | 870pF @ 800V | |
Gate Charge (Qg) (Max) @ Vgs | 57nC @ 20V | |
Drain to Source Voltage (Vdss) | 1200V | |
Vgs (Max) | +22V, -6V | |
FET Feature | - |
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