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WG40N65DFWQ Tech Specifications
| Category | Transistors - IGBTs - Modules | |
| Manufacturer | WeEn Semiconductors | |
| Type of transistor | IGBT | |
| Collector-emitter voltage | 650V | |
| Collector current | 40A | |
| Case | TO247-3 | |
| Gate-emitter voltage | ±20V | |
| Pulsed collector current | 120A | |
| Mounting | THT |
| Kind of package | tube | |
| Turn-on time | 95ns | |
| Turn-off time | 378ns | |
| Features of semiconductor devices | integrated anti-parallel diode | |
| Gross weight | 5.985g | |
| Certificates | RoHS compliant | |
| Power dissipation | 125W | |
| Gate charge | 173nC |
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