WG40N65DFWQ Tech Specifications

Category Transistors - IGBTs - Modules
Manufacturer WeEn Semiconductors
Type of transistor IGBT
Collector-emitter voltage 650V
Collector current 40A
Case TO247-3
Gate-emitter voltage ±20V
Pulsed collector current 120A
Mounting THT
Kind of package tube
Turn-on time 95ns
Turn-off time 378ns
Features of semiconductor devices integrated anti-parallel diode
Gross weight 5.985g
Certificates RoHS compliant
Power dissipation 125W
Gate charge 173nC
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