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GA35XCP12-247 Tech Specifications

Category Transistors - IGBTs - Single
Manufacturer GeneSiC Semiconductor
Factory Lead Time 18 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Collector-Emitter Breakdown Voltage 1.2kV
Collector-Emitter Saturation Voltage 3V
Test Conditions 800V, 35A, 22 Ω, 15V
Operating Temperature -40°C~150°C TJ
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Input Type Standard
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 3V
Reverse Recovery Time 36 ns
Voltage - Collector Emitter Breakdown (Max) 1200V
Vce(on) (Max) @ Vge, Ic 3V @ 15V, 35A
IGBT Type PT
Gate Charge 50nC
Current - Collector Pulsed (Icm) 35A
Switching Energy 2.66mJ (on), 4.35mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
RoHS Status RoHS Compliant
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GA35XCP12-247 Documents

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GA35XCP12-247 brand manufacturers: GeneSiC Semiconductor, Elecinsight stock, GA35XCP12-247 reference price.GeneSiC Semiconductor. GA35XCP12-247 parameters, GA35XCP12-247 Datasheet PDF and pin diagram description download.You can use the GA35XCP12-247 Transistors - IGBTs - Single, DSP Datesheet PDF, find GA35XCP12-247 pin diagram and circuit diagram and usage method of function,GA35XCP12-247 electronics tutorials.You can download from the Elecinsight.