NEC Compound Semiconductor Devices Ltd NE3210S01-T1B Specialized Transistors
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NE3210S01-T1B Tech Specifications
| Category | Transistors - Special Purpose | |
| Manufacturer | ||
| Surface Mount | YES | |
| Housing Material | ABS UL94-V0 | |
| Number of Terminals | 4Terminals | |
| Transistor Element Material | GALLIUM ARSENIDE | |
| Exterior Housing Material | 1 | |
| Dielectric Strength | 2500 (50 Hz / 1 min.) V | |
| Load Voltage | ~90...480 V | |
| Transport Packaging size/qty | 42.5*35.5*15/50 | |
| Gross Weight | 125.60 | |
| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | NEC COMPOUND SEMICONDUCTOR DEVICES LTD | |
| Drain Current-Max (ID) | 0.015 A | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | UNSPECIFIED | |
| Package Style | MICROWAVE | |
| JESD-609 Code | e0 | |
| ECCN Code | EAR99 | |
| Type | Single-phase SSR solid state relay series | |
| Terminal Finish | TIN LEAD | |
| Terminal Position | UNSPECIFIED |
| Terminal Form | GULL WING | |
| Depth | 62 mm | |
| Reach Compliance Code | compliant | |
| JESD-30 Code | X-PXMW-G4 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE | |
| Insulation Resistance | 100 (at Uis.d.c=500V) MΩ min | |
| Leakage Current | 5 mA | |
| Operating Mode | DEPLETION MODE | |
| Case Connection | SOURCE | |
| Control Mode | with zero crossing control | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | N-CHANNEL | |
| DS Breakdown Voltage-Min | 3 V | |
| FET Technology | HETERO-JUNCTION | |
| Load Current | 10 A | |
| Control Voltage | 80...250 (AC) V | |
| Highest Frequency Band | KU BAND | |
| Switching Time | 8.3 ms max | |
| Power Gain-Min (Gp) | 12 dB | |
| Height | 22.5 mm | |
| Width | 45 mm |
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