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Image Part # Manufacturer Description Pricing Quantity RoHS Mount Surface Mount Number of Pins Number of Terminals Manufacturer Package Identifier Access Time-Max Clock Frequency-Max (fCLK) Ihs Manufacturer Manufacturer Manufacturer Part Number Memory Types Moisture Sensitivity Levels Number of Words Number of Words Code Operating Temperature-Max Operating Temperature-Min Package Body Material Package Code Package Description Package Equivalence Code Package Shape Package Style Part Life Cycle Code Part Package Code Reflow Temperature-Max (s) Risk Rank RoHS Rohs Code Supply Voltage-Nom (Vsup) Packaging JESD-609 Code Pbfree Code ECCN Code Terminal Finish Max Operating Temperature Min Operating Temperature Additional Feature HTS Code Subcategory Technology Terminal Position Terminal Form Peak Reflow Temperature (Cel) Number of Functions Terminal Pitch Reach Compliance Code Frequency Pin Count JESD-30 Code Qualification Status Operating Supply Voltage Supply Voltage-Max (Vsup) Power Supplies Temperature Grade Supply Voltage-Min (Vsup) Interface Max Supply Voltage Min Supply Voltage Memory Size Number of Ports Nominal Supply Current Operating Mode Supply Current-Max Access Time Organization Output Characteristics Seated Height-Max Memory Width Address Bus Width Density Standby Current-Max Memory Density Max Frequency I/O Type Memory IC Type Refresh Cycles Sequential Burst Length Interleaved Burst Length Access Mode Self Refresh Height Length Width Lead Free
Samsung K4B4G1646E-BYMA
Mfr. Part #
K4B4G1646E-BYMA
Elecinsight Part #
700-535-K4B4G1646E-BYMA
IN STOCK: 20000
Samsung
FBGA-96 DDR SDRAM ROHS
Datasheet Compare
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    K4B4G1646E-BYMA
    K4B4G1646E-BYMA

    700-535-K4B4G1646E-BYMA Samsung
    RoHS :
    Package : -
    In Stock : 20000
    1 : -
    Samsung K4B4G1646E-BCMA
    Mfr. Part #
    K4B4G1646E-BCMA
    Elecinsight Part #
    700-535-K4B4G1646E-BCMA
    IN STOCK: 419
    		Samsung
    FBGA DDR SDRAM ROHS
    Datasheet Compare
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      K4B4G1646E-BCMA
      K4B4G1646E-BCMA

      700-535-K4B4G1646E-BCMA Samsung
      RoHS :
      Package : -
      In Stock : 419
      1 : -
      Samsung K4B1G1646G-BCH9
      Mfr. Part #
      K4B1G1646G-BCH9
      Elecinsight Part #
      700-535-K4B1G1646G-BCH9
      IN STOCK: 906
      		Samsung
      -
      Datasheet Compare
        Min.:1
        Mult.:1
        		 - YES - 96 - 0.255 ns 667 MHz SAMSUNG SEMICONDUCTOR INC Samsung Semiconductor K4B1G1646G-BCH9 - 3 67108864 words 64000000 - - PLASTIC/EPOXY FBGA FBGA, BGA96,9X16,32 BGA96,9X16,32 RECTANGULAR GRID ARRAY, FINE PITCH Obsolete - NOT SPECIFIED 8.58 - Yes 1.5 V - e1 Yes - Tin/Silver/Copper (Sn/Ag/Cu) - - - - DRAMs CMOS BOTTOM BALL 225 - 0.8 mm compliant - - R-PBGA-B96 Not Qualified - - 1.5 V - - - - - - - - - 0.17 mA - 64MX16 3-STATE - 16 - - 0.01 A 1073741824 bit - COMMON DDR DRAM 8192 4,8 4,8 - - - - - -
        K4B1G1646G-BCH9
        K4B1G1646G-BCH9

        700-535-K4B1G1646G-BCH9 Samsung
        RoHS :
        Package : -
        In Stock : 906
        1 : -
        Samsung K4B2G1646F-BYMA
        Mfr. Part #
        K4B2G1646F-BYMA
        Elecinsight Part #
        700-535-K4B2G1646F-BYMA
        IN STOCK: 10000
        		Samsung
        FBGA-96 DDR SDRAM ROHS
        Datasheet Compare
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          K4B2G1646F-BYMA
          K4B2G1646F-BYMA

          700-535-K4B2G1646F-BYMA Samsung
          RoHS :
          Package : -
          In Stock : 10000
          1 : -
          Samsung K4S561632J-UC75
          Mfr. Part #
          K4S561632J-UC75
          Elecinsight Part #
          700-535-K4S561632J-UC75
          IN STOCK: 32
          		Samsung
          -
          Datasheet Compare
            Min.:1
            Mult.:1
            		 Surface Mount YES 54 54 TSOP(II)54 5.4 ns 133 MHz SAMSUNG SEMICONDUCTOR INC Samsung Semiconductor K4S561632J-UC75 SDRAM 2 16777216 words 16000000 70 °C - PLASTIC/EPOXY TSOP - TSOP54,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE Obsolete - NOT SPECIFIED 5.65 Compliant Yes 3.3 V Tape and Reel e6 Yes - Tin/Bismuth (Sn97Bi3) 70 °C 0 °C - - DRAMs CMOS DUAL GULL WING 260 - 0.8 mm unknown 133 MHz - R-PDSO-G54 Not Qualified 3.3 V - 3.3 V COMMERCIAL - Parallel 3.6 V 3 V 32 MB - 110 mA - 0.12 mA 7.5 ns 16MX16 3-STATE - 16 15 b 256 Mb 0.002 A 268435456 bit 133 MHz COMMON SYNCHRONOUS DRAM 8192 1,2,4,8,FP 1,2,4,8 - - 1.2 mm - - Lead Free
            K4S561632J-UC75
            K4S561632J-UC75

            700-535-K4S561632J-UC75 Samsung
            RoHS :
            Package : -
            In Stock : 32
            1 : -
            Samsung K4B2G0846D-HCH9
            Mfr. Part #
            K4B2G0846D-HCH9
            Elecinsight Part #
            700-535-K4B2G0846D-HCH9
            IN STOCK: 600
            		Samsung
            DDR DRAM, 256MX8, 0.255ns, CMOS, PBGA78
            Datasheet Compare
              Min.:1
              Mult.:1
              		 - YES - 78 - 0.255 ns 667 MHz SAMSUNG SEMICONDUCTOR INC Samsung Semiconductor K4B2G0846D-HCH9 - - 268435456 words 256000000 85 °C - PLASTIC/EPOXY FBGA FBGA, BGA78,9X13,32 BGA78,9X13,32 RECTANGULAR GRID ARRAY, FINE PITCH Obsolete - - 5.79 - Yes 1.5 V - - - - - - - - - DRAMs CMOS BOTTOM BALL - - 0.8 mm compliant - - R-PBGA-B78 Not Qualified - - 1.5 V OTHER - - - - - - - - 0.135 mA - 256MX8 3-STATE - 8 - - 0.012 A 2147483648 bit - COMMON DDR DRAM 8192 8 8 - - - - - -
              K4B2G0846D-HCH9
              K4B2G0846D-HCH9

              700-535-K4B2G0846D-HCH9 Samsung
              RoHS :
              Package : -
              In Stock : 600
              1 : -
              Samsung K4S281632I-UC75
              Mfr. Part #
              K4S281632I-UC75
              Elecinsight Part #
              700-535-K4S281632I-UC75
              IN STOCK: 23
              		Samsung
              -
              Datasheet Compare
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                Mult.:1
                		 - YES - 54 - 5.4 ns 133 MHz SAMSUNG SEMICONDUCTOR INC Samsung Semiconductor K4S281632I-UC75 - 3 8388608 words 8000000 70 °C - PLASTIC/EPOXY TSOP2 TSOP2, TSOP54,.46,32 TSOP54,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE Obsolete - NOT SPECIFIED 8.33 - Yes 3.3 V - e6 Yes - Tin/Bismuth (Sn97Bi3) - - AUTO/SELF REFRESH - DRAMs CMOS DUAL GULL WING 260 1 0.8 mm compliant - - R-PDSO-G54 Not Qualified - 3.6 V 3.3 V COMMERCIAL 3 V - - - - 1 - SYNCHRONOUS 0.2 mA - 8MX16 3-STATE 1.2 mm 16 - - 0.002 A 134217728 bit - COMMON SYNCHRONOUS DRAM 4096 1,2,4,8,FP 1,2,4,8 FOUR BANK PAGE BURST YES - 22.22 mm 10.16 mm -
                K4S281632I-UC75
                K4S281632I-UC75

                700-535-K4S281632I-UC75 Samsung
                RoHS :
                Package : -
                In Stock : 23
                1 : -
                Samsung K4S641632K-UC75
                Mfr. Part #
                K4S641632K-UC75
                Elecinsight Part #
                700-535-K4S641632K-UC75
                IN STOCK: 739
                		Samsung
                -
                Datasheet Compare
                  Min.:1
                  Mult.:1
                  		 - YES - 54 - 5.4 ns 133 MHz SAMSUNG SEMICONDUCTOR INC Samsung Semiconductor K4S641632K-UC75 - 3 4194304 words 4000000 70 °C - PLASTIC/EPOXY TSOP2 TSOP2, TSOP54,.46,32 TSOP54,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE Obsolete - - 5.79 - Yes 3.3 V - e6 Yes EAR99 Tin/Bismuth (Sn97Bi3) - - AUTO/SELF REFRESH - DRAMs CMOS DUAL GULL WING - 1 0.8 mm unknown - - R-PDSO-G54 Not Qualified - 3.6 V 3.3 V COMMERCIAL 3 V - - - - 1 - SYNCHRONOUS 0.085 mA - 4MX16 3-STATE 1.2 mm 16 - - 0.001 A 67108864 bit - COMMON SYNCHRONOUS DRAM 4096 1,2,4,8,FP 1,2,4,8 FOUR BANK PAGE BURST YES - 22.22 mm 10.16 mm -
                  K4S641632K-UC75
                  K4S641632K-UC75

                  700-535-K4S641632K-UC75 Samsung
                  RoHS :
                  Package : -
                  In Stock : 739
                  1 : -
                  Samsung K4S281632F-UC75
                  Mfr. Part #
                  K4S281632F-UC75
                  Elecinsight Part #
                  700-535-K4S281632F-UC75
                  IN STOCK: 18
                  		Samsung
                  -
                  Datasheet Compare
                    Min.:1
                    Mult.:1
                    		 - YES - 54 - 6 ns 133 MHz SAMSUNG SEMICONDUCTOR INC Samsung Semiconductor K4S281632F-UC75 - 3 8388608 words 8000000 70 °C - PLASTIC/EPOXY TSOP2 TSOP2, TSOP54,.46,32 TSOP54,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE Obsolete - NOT SPECIFIED 8.4 - Yes 3.3 V - e6 Yes EAR99 Tin/Bismuth (Sn97Bi3) - - AUTO/SELF REFRESH 8542.32.00.02 DRAMs CMOS DUAL GULL WING 260 1 0.8 mm unknown - - R-PDSO-G54 Not Qualified - 3.6 V 3.3 V COMMERCIAL 3 V - - - - 1 - SYNCHRONOUS 0.2 mA - 8MX16 3-STATE 1.2 mm 16 - - 0.002 A 134217728 bit - COMMON SYNCHRONOUS DRAM 4096 1,2,4,8,FP 1,2,4,8 FOUR BANK PAGE BURST YES - 22.22 mm 10.16 mm -
                    K4S281632F-UC75
                    K4S281632F-UC75

                    700-535-K4S281632F-UC75 Samsung
                    RoHS :
                    Package : -
                    In Stock : 18
                    1 : -
                    Samsung K4S643232H-UC60
                    Mfr. Part #
                    K4S643232H-UC60
                    Elecinsight Part #
                    700-535-K4S643232H-UC60
                    IN STOCK: 3600
                    		Samsung
                    -
                    Datasheet Compare
                      Min.:1
                      Mult.:1
                      		 - YES - 86 - 5.5 ns 166 MHz SAMSUNG SEMICONDUCTOR INC Samsung Semiconductor K4S643232H-UC60 - 3 2097152 words 2000000 70 °C - PLASTIC/EPOXY TSSOP - TSSOP86,.46,20 RECTANGULAR SMALL OUTLINE, THIN PROFILE, SHRINK PITCH Obsolete - 40 5.52 - Yes 3.3 V - e6 - - Tin/Bismuth (Sn97Bi3) - - - - DRAMs CMOS DUAL GULL WING 260 - 0.5 mm unknown - - R-PDSO-G86 Not Qualified - - 3.3 V COMMERCIAL - - - - - - - - 0.15 mA - 2MX32 3-STATE - 32 - - 0.002 A 67108864 bit - COMMON SYNCHRONOUS DRAM 4096 1,2,4,8,FP 1,2,4,8 - - - - - -
                      K4S643232H-UC60
                      K4S643232H-UC60

                      700-535-K4S643232H-UC60 Samsung
                      RoHS :
                      Package : -
                      In Stock : 3600
                      1 : -
                      Samsung K4H561638H-UCB3
                      Mfr. Part #
                      K4H561638H-UCB3
                      Elecinsight Part #
                      700-535-K4H561638H-UCB3
                      IN STOCK: 38
                      		Samsung
                      -
                      Datasheet Compare
                        Min.:1
                        Mult.:1
                        		 - YES - 66 - 0.7 ns 166 MHz SAMSUNG SEMICONDUCTOR INC Samsung Semiconductor K4H561638H-UCB3 - 3 16777216 words 16000000 70 °C - PLASTIC/EPOXY TSSOP - TSSOP66,.46 RECTANGULAR SMALL OUTLINE, THIN PROFILE, SHRINK PITCH Obsolete - 40 5.79 Compliant Yes 2.3 V - e6 Yes - Tin/Bismuth (Sn97Bi3) - - - - DRAMs CMOS DUAL GULL WING 260 - 0.635 mm unknown 166 MHz - R-PDSO-G66 Not Qualified - - 2.3 V COMMERCIAL - - - - - - - - 0.33 mA - 16MX16 3-STATE - 16 - - 0.003 A 268435456 bit - COMMON DDR DRAM 8192 2,4,8 2,4,8 - - - - - Lead Free
                        K4H561638H-UCB3
                        K4H561638H-UCB3

                        700-535-K4H561638H-UCB3 Samsung
                        RoHS :
                        Package : -
                        In Stock : 38
                        1 : -
                        Samsung K4T51163QJ-BCE7
                        Mfr. Part #
                        K4T51163QJ-BCE7
                        Elecinsight Part #
                        700-535-K4T51163QJ-BCE7
                        IN STOCK: 1500
                        		Samsung
                        -
                        Datasheet Compare
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                          K4T51163QJ-BCE7
                          K4T51163QJ-BCE7

                          700-535-K4T51163QJ-BCE7 Samsung
                          RoHS :
                          Package : -
                          In Stock : 1500
                          1 : -
                          Samsung K4H561638H-UCCC
                          Mfr. Part #
                          K4H561638H-UCCC
                          Elecinsight Part #
                          700-535-K4H561638H-UCCC
                          IN STOCK: 171
                          		Samsung
                          -
                          Datasheet Compare
                            Min.:1
                            Mult.:1
                            		 - YES - 66 - 0.65 ns 200 MHz SAMSUNG SEMICONDUCTOR INC Samsung Semiconductor K4H561638H-UCCC - 3 16777216 words 16000000 70 °C - PLASTIC/EPOXY TSSOP - TSSOP66,.46 RECTANGULAR SMALL OUTLINE, THIN PROFILE, SHRINK PITCH Obsolete - NOT SPECIFIED 5.8 - Yes 2.5 V - e6 Yes - Tin/Bismuth (Sn97Bi3) - - - - DRAMs CMOS DUAL GULL WING 260 - 0.635 mm unknown - - R-PDSO-G66 Not Qualified - - 2.5 V COMMERCIAL - - - - - - - - 0.35 mA - 16MX16 3-STATE - 16 - - 0.004 A 268435456 bit - COMMON DDR DRAM 8192 2,4,8 2,4,8 - - - - - -
                            K4H561638H-UCCC
                            K4H561638H-UCCC

                            700-535-K4H561638H-UCCC Samsung
                            RoHS :
                            Package : -
                            In Stock : 171
                            1 : -
                            Samsung K4S561632E-UC75
                            Mfr. Part #
                            K4S561632E-UC75
                            Elecinsight Part #
                            700-535-K4S561632E-UC75
                            IN STOCK: 2
                            		Samsung
                            -
                            Datasheet Compare
                              Min.:1
                              Mult.:1
                              		 - YES - 54 - 5.4 ns 133 MHz SAMSUNG SEMICONDUCTOR INC Samsung Semiconductor K4S561632E-UC75 - 3 16777216 words 16000000 70 °C - PLASTIC/EPOXY TSOP2 TSOP2, TSOP54,.46,32 TSOP54,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE Obsolete - NOT SPECIFIED 5.66 - Yes 3.3 V - e6 Yes - Tin/Bismuth (Sn96Bi4) - - AUTO/SELF REFRESH - DRAMs CMOS DUAL GULL WING 260 1 0.8 mm unknown - - R-PDSO-G54 Not Qualified - 3.6 V 3.3 V COMMERCIAL 3 V - - - - 1 - SYNCHRONOUS 0.18 mA - 16MX16 3-STATE 1.2 mm 16 - - 0.002 A 268435456 bit - COMMON SYNCHRONOUS DRAM 8192 1,2,4,8,FP 1,2,4,8 FOUR BANK PAGE BURST YES - 22.22 mm 10.16 mm -
                              K4S561632E-UC75
                              K4S561632E-UC75

                              700-535-K4S561632E-UC75 Samsung
                              RoHS :
                              Package : -
                              In Stock : 2
                              1 : -
                              Samsung Semiconductor K4S281632O-LI75T00
                              Mfr. Part #
                              K4S281632O-LI75T00
                              Elecinsight Part #
                              700-535-K4S281632O-LI75T00
                              		Samsung Semiconductor
                              -
                              Datasheet Compare
                                Min.:1
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                                K4S281632O-LI75T00
                                K4S281632O-LI75T00

                                700-535-K4S281632O-LI75T00 Samsung Semiconductor
                                RoHS :
                                Package : -
                                In Stock : -
                                1 : -
                                Samsung K4H511638D-UCCC
                                Mfr. Part #
                                K4H511638D-UCCC
                                Elecinsight Part #
                                700-535-K4H511638D-UCCC
                                IN STOCK: 2300
                                		Samsung
                                DDR DRAM, 32MX16, 0.65ns, CMOS, PDSO66,
                                Datasheet Compare
                                  Min.:1
                                  Mult.:1
                                  		 - YES - 66 - 0.65 ns 200 MHz SAMSUNG SEMICONDUCTOR INC Samsung Semiconductor K4H511638D-UCCC - 3 33554432 words 32000000 70 °C - PLASTIC/EPOXY TSSOP - TSSOP66,.46 RECTANGULAR SMALL OUTLINE, THIN PROFILE, SHRINK PITCH Obsolete - NOT SPECIFIED 5.81 - Yes 2.6 V - e6 Yes - Tin/Bismuth (Sn97Bi3) - - - - DRAMs CMOS DUAL GULL WING 260 - 0.635 mm unknown - - R-PDSO-G66 Not Qualified - - 2.6 V COMMERCIAL - - - - - - - - 0.4 mA - 32MX16 3-STATE - 16 - - 0.005 A 536870912 bit - COMMON DDR DRAM 8192 2,4,8 2,4,8 - - - - - -
                                  K4H511638D-UCCC
                                  K4H511638D-UCCC

                                  700-535-K4H511638D-UCCC Samsung
                                  RoHS :
                                  Package : -
                                  In Stock : 2300
                                  1 : -
                                  Samsung K4S281632I-UI75
                                  Mfr. Part #
                                  K4S281632I-UI75
                                  Elecinsight Part #
                                  700-535-K4S281632I-UI75
                                  IN STOCK: 196
                                  		Samsung
                                  Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, ROHS COMPLIANT, TSOP2-54
                                  Datasheet Compare
                                    Min.:1
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                                    K4S281632I-UI75
                                    K4S281632I-UI75

                                    700-535-K4S281632I-UI75 Samsung
                                    RoHS :
                                    Package : -
                                    In Stock : 196
                                    1 : -
                                    Samsung K4H511638D-UCB3
                                    Mfr. Part #
                                    K4H511638D-UCB3
                                    Elecinsight Part #
                                    700-535-K4H511638D-UCB3
                                    IN STOCK: 1000
                                    		Samsung
                                    DDR DRAM, 32MX16, 0.7ns, CMOS, PDSO66,
                                    Datasheet Compare
                                      Min.:1
                                      Mult.:1
                                      		 - YES - 66 - 0.7 ns 166 MHz SAMSUNG SEMICONDUCTOR INC Samsung Semiconductor K4H511638D-UCB3 - 2 33554432 words 32000000 70 °C - PLASTIC/EPOXY TSSOP - TSSOP66,.46 RECTANGULAR SMALL OUTLINE, THIN PROFILE, SHRINK PITCH Obsolete - NOT SPECIFIED 5.82 - Yes 2.5 V - e6 Yes - Tin/Bismuth (Sn97Bi3) - - - - DRAMs CMOS DUAL GULL WING 260 - 0.635 mm unknown - - R-PDSO-G66 Not Qualified - - 2.5 V COMMERCIAL - - - - - - - - 0.38 mA - 32MX16 3-STATE - 16 - - 0.005 A 536870912 bit - COMMON DDR DRAM 8192 2,4,8 2,4,8 - - - - - -
                                      K4H511638D-UCB3
                                      K4H511638D-UCB3

                                      700-535-K4H511638D-UCB3 Samsung
                                      RoHS :
                                      Package : -
                                      In Stock : 1000
                                      1 : -
                                      Samsung K4S281632K-UC60
                                      Mfr. Part #
                                      K4S281632K-UC60
                                      Elecinsight Part #
                                      700-535-K4S281632K-UC60
                                      IN STOCK: 117
                                      		Samsung
                                      Synchronous DRAM, 8MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, TSOP2-54
                                      Datasheet Compare
                                        Min.:1
                                        Mult.:1
                                        		 - YES - 54 - 5 ns 200 MHz SAMSUNG SEMICONDUCTOR INC Samsung Semiconductor K4S281632K-UC60 - 3 8388608 words 8000000 70 °C - PLASTIC/EPOXY TSOP2 TSOP2, TSOP54,.46,32 TSOP54,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE Obsolete TSOP2 NOT SPECIFIED 5.72 - Yes 3.3 V - - Yes EAR99 - - - AUTO/SELF REFRESH 8542.32.00.02 DRAMs CMOS DUAL GULL WING NOT SPECIFIED 1 0.8 mm unknown - 54 R-PDSO-G54 Not Qualified - 3.6 V 3.3 V COMMERCIAL 3 V - - - - 1 - SYNCHRONOUS 0.22 mA - 8MX16 3-STATE 1.2 mm 16 - - 0.002 A 134217728 bit - COMMON SYNCHRONOUS DRAM 4096 1,2,4,8,FP 1,2,4,8 FOUR BANK PAGE BURST YES - 22.22 mm 10.16 mm -
                                        K4S281632K-UC60
                                        K4S281632K-UC60

                                        700-535-K4S281632K-UC60 Samsung
                                        RoHS :
                                        Package : -
                                        In Stock : 117
                                        1 : -
                                        Samsung K4S561632J-UI75
                                        Mfr. Part #
                                        K4S561632J-UI75
                                        Elecinsight Part #
                                        700-535-K4S561632J-UI75
                                        IN STOCK: 1457
                                        		Samsung
                                        Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, ROHS COMPLIANT, TSOP2-54
                                        Datasheet Compare
                                          Min.:1
                                          Mult.:1
                                          		 - YES - 54 - 5.4 ns 133 MHz SAMSUNG SEMICONDUCTOR INC Samsung Semiconductor K4S561632J-UI75 - 3 16777216 words 16000000 85 °C -40 °C PLASTIC/EPOXY TSOP2 TSOP2, TSOP54,.46,32 TSOP54,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE Obsolete - NOT SPECIFIED 5.82 - Yes 3.3 V - e6 Yes - Tin/Bismuth (Sn97Bi3) - - AUTO/SELF REFRESH - DRAMs CMOS DUAL GULL WING 260 1 0.8 mm unknown - - R-PDSO-G54 Not Qualified - 3.6 V 3.3 V INDUSTRIAL 3 V - - - - 1 - SYNCHRONOUS 0.18 mA - 16MX16 3-STATE 1.2 mm 16 - - 0.002 A 268435456 bit - COMMON SYNCHRONOUS DRAM 8192 1,2,4,8,FP 1,2,4,8 FOUR BANK PAGE BURST YES - 22.22 mm 10.16 mm -
                                          K4S561632J-UI75
                                          K4S561632J-UI75

                                          700-535-K4S561632J-UI75 Samsung
                                          RoHS :
                                          Package : -
                                          In Stock : 1457
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                                          Integrated Circuits (ICs)

                                          Memory definition: Memory is a component used to store programs and various data information. A memory cell is actually a type of sequential logic circuit. A m... Memory Product Listing: K4B4G1646E-BYMA,K4B4G1646E-BCMA,K4B1G1646G-BCH9,K4B2G1646F-BYMA,K4S561632J-UC75.Integrated Circuits (ICs) type:Embedded - Microcontrollers(134273),Memory(116337),PMIC - Voltage Regulators - Linear(107072),PMIC - Supervisors(101983),Embedded - FPGAs (Field Programmable Gate Array)(62862) .Memory has 1151 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Elecinsight.