| Image | Part # | Manufacturer | Description | Pricing | Quantity | RoHS | Surface Mount | Weight | Number of Terminals | Access Time-Max | Analog | Capacitors series | Case - inch | Case - mm | Cleaning method | Clock Frequency-Max (fCLK) | Gross weight | Ihs Manufacturer | Kind of capacitor | Melting temperature | Moisture Sensitivity Levels | Mounting | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Rohs Code | Soldering temperature | Supply Voltage-Nom (Vsup) | Transport packaging size/quantity | Type of capacitor | Operating temperature | Packaging | Tolerance | JESD-609 Code | Pbfree Code | ECCN Code | Type | Terminal Finish | Additional Feature | HTS Code | Capacitance | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Dielectric | Supply Voltage-Max (Vsup) | Temperature Grade | Supply Voltage-Min (Vsup) | Number of Ports | Operating Mode | Supply Current-Max | Organization | Output Characteristics | Seated Height-Max | Memory Width | Standby Current-Max | Memory Density | Screening Level | Design | Parallel/Serial | I/O Type | Memory IC Type | Programming Voltage | Serial Bus Type | Endurance | Write Cycle Time-Max (tWC) | Data Retention Time-Min | Write Protection | Standby Voltage-Min | Data Polling | Toggle Bit | Command User Interface | Page Size | Refresh Cycles | I2C Control Byte | Sequential Burst Length | Interleaved Burst Length | Access Mode | Operating voltage | Self Refresh | Diameter | Length | Width |
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![]() | Mfr. Part #CAT24WC02UTElecinsight Part #799-535-CAT24WC02UT | Catalyst Semiconductor |
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Datasheet
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| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| CAT24WC02UT | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #M12L64164A-7TElecinsight Part #799-535-M12L64164A-7T | Elite Semiconductor Memory Technology Inc |
Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54,
Datasheet
Compare
| Min.:1 Mult.:1 | YES | - | 54 | 6 ns | - | - | - | - | - | 143 MHz | - | ELITE SEMICONDUCTOR MICROELECTRONICS TECHNOLOGYINC | - | - | - | - | 4194304 words | 4000000 | 70 °C | - | PLASTIC/EPOXY | TSOP | - | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | - | No | - | 3.3 V | - | - | - | - | - | - | - | EAR99 | - | - | - | 8542.32.00.02 | - | DUAL | GULL WING | - | - | 0.8 mm | unknown | - | - | R-PDSO-G54 | Not Qualified | - | - | COMMERCIAL | - | - | - | 0.18 mA | 4MX16 | 3-STATE | - | 16 | 0.001 A | 67108864 bit | - | - | - | COMMON | SYNCHRONOUS DRAM | - | - | - | - | - | - | - | - | - | - | - | 4096 | - | 1,2,4,8,FP | 1,2,4,8 | - | - | - | - | - | - | ||
| M12L64164A-7T 799-535-M12L64164A-7T Elite Semiconductor Memory Technology Inc
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![]() | Mfr. Part #P4C116-25LMBElecinsight Part #799-535-P4C116-25LMB | Pyramid Semiconductor Corporation |
Standard SRAM, 2KX8, 25ns, CMOS, 0.300 X 0.400 INCH, LCC-24
Datasheet
Compare
| Min.:1 Mult.:1 | YES | - | 24 | 25 ns | - | - | - | - | - | - | - | PYRAMID SEMICONDUCTOR CORP | - | - | - | - | 2048 words | 2000 | 125 °C | -55 °C | UNSPECIFIED | QCCN | 0.300 X 0.400 INCH, LCC-24 | LCC24,.3X.4 | RECTANGULAR | CHIP CARRIER | Active | LCC | No | - | 5 V | - | - | - | - | - | - | No | 3A001.A.2.C | - | - | - | 8542.32.00.41 | - | QUAD | NO LEAD | NOT SPECIFIED | 1 | 1.27 mm | compliant | NOT SPECIFIED | 24 | R-XQCC-N24 | Not Qualified | - | 5.5 V | MILITARY | 4.5 V | - | ASYNCHRONOUS | 0.15 mA | 2KX8 | 3-STATE | 1.9304 mm | 8 | 0.015 A | 16384 bit | MIL-STD-883 Class B | - | PARALLEL | COMMON | STANDARD SRAM | - | - | - | - | - | - | 4.5 V | - | - | - | - | - | - | - | - | - | - | - | - | 10.16 mm | 7.62 mm | ||
| P4C116-25LMB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #CAT24C05WIElecinsight Part #799-535-CAT24C05WI | Catalyst Semiconductor |
EEPROM,
Datasheet
Compare
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | CATALYST SEMICONDUCTOR INC | - | - | - | - | - | - | - | - | - | - | , | - | - | - | Transferred | - | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | 8542.32.00.51 | - | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| CAT24C05WI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #CAT28C64BX-15TElecinsight Part #799-535-CAT28C64BX-15T | Catalyst Semiconductor |
Description: EEPROM, 8KX8, 150ns, Parallel, CMOS, PDSO28, LEAD FREE AND HALOGEN FREE, EIAJ, SOIC-28
Datasheet
Compare
| Min.:1 Mult.:1 | YES | - | 28 | 150 ns | - | - | - | - | - | - | - | CATALYST SEMICONDUCTOR INC | - | - | 1 | - | 8192 words | 8000 | 70 °C | - | PLASTIC/EPOXY | SOP | LEAD FREE AND HALOGEN FREE, EIAJ, SOIC-28 | SOP28,.45 | RECTANGULAR | SMALL OUTLINE | Transferred | SOIC | Yes | - | 5 V | - | - | - | - | - | e3 | - | EAR99 | - | MATTE TIN | - | 8542.32.00.51 | - | DUAL | GULL WING | - | 1 | 1.27 mm | unknown | - | 28 | R-PDSO-G28 | Not Qualified | - | 5.5 V | COMMERCIAL | 4.5 V | - | ASYNCHRONOUS | 0.03 mA | 8KX8 | - | 2.65 mm | 8 | 0.0001 A | 65536 bit | - | - | PARALLEL | - | EEPROM | 5 V | - | 1000000 Write/Erase Cycles | 5 ms | - | - | - | YES | YES | NO | 32 words | - | - | - | - | - | - | - | - | 17.9 mm | 7.5 mm | ||
| CAT28C64BX-15T | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #M53D2561616A-5BG2FElecinsight Part #799-535-M53D2561616A-5BG2F | Elite Semiconductor Memory Technology Inc |
Description: DDR DRAM, 16MX16, 5ns, CMOS, PBGA60, 8 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, BGA-60
Datasheet
Compare
| Min.:1 Mult.:1 | YES | - | 60 | 5 ns | - | - | - | - | - | - | - | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | - | - | - | - | 16777216 words | 16000000 | 70 °C | - | PLASTIC/EPOXY | TFBGA | TFBGA, | - | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Contact Manufacturer | - | - | - | 1.8 V | - | - | - | - | - | - | - | EAR99 | - | - | AUTO/SELF REFRESH | 8542.32.00.24 | - | BOTTOM | BALL | - | 1 | 0.8 mm | unknown | - | - | R-PBGA-B60 | - | - | 1.95 V | COMMERCIAL | 1.7 V | 1 | SYNCHRONOUS | - | 16MX16 | - | 1.2 mm | 16 | - | 268435456 bit | - | - | - | - | DDR DRAM | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | FOUR BANK PAGE BURST | - | YES | - | 13 mm | 8 mm | ||
| M53D2561616A-5BG2F 799-535-M53D2561616A-5BG2F Elite Semiconductor Memory Technology Inc
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![]() | Mfr. Part #CAT93C46AKElecinsight Part #799-535-CAT93C46AK | Catalyst Semiconductor |
EEPROM, 64X16, Serial, CMOS, PDSO8, 0.210 INCH, EIAJ, SOIC-8
Datasheet
Compare
| Min.:1 Mult.:1 | YES | - | 8 | - | - | - | - | - | - | 1 MHz | - | CATALYST SEMICONDUCTOR INC | - | - | - | - | 64 words | 64 | 70 °C | - | PLASTIC/EPOXY | SOP | SOP, SOP8,.3 | SOP8,.3 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOIC | No | - | 5 V | - | - | - | - | - | e0 | No | EAR99 | - | TIN LEAD | 3 WIRE INTERFACE | 8542.32.00.51 | - | DUAL | GULL WING | - | 1 | 1.27 mm | unknown | - | 8 | R-PDSO-G8 | Not Qualified | - | 5.5 V | COMMERCIAL | 4.5 V | - | SYNCHRONOUS | 0.003 mA | 64X16 | - | 2.03 mm | 16 | 0.00005 A | 1024 bit | - | - | SERIAL | - | EEPROM | - | MICROWIRE | 1000000 Write/Erase Cycles | 10 ms | 100 | SOFTWARE | - | - | - | - | - | - | - | - | - | - | - | - | - | 5.3 mm | 5.25 mm | ||
| CAT93C46AK | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #CXK5T16100TM-12LLXElecinsight Part #799-535-CXK5T16100TM-12LLX | Sony Semiconductor |
Standard SRAM, 64KX16, 120ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-44
Datasheet
Compare
| Min.:1 Mult.:1 | YES | - | 44 | 120 ns | - | - | - | - | - | - | - | SONY CORP | - | - | - | - | 65536 words | 64000 | 85 °C | -25 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP44,.46,32 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | - | - | 3.3 V | - | - | - | - | - | - | - | EAR99 | - | - | - | 8542.32.00.41 | - | DUAL | GULL WING | - | 1 | 0.8 mm | unknown | - | 44 | R-PDSO-G44 | Not Qualified | - | 3.6 V | OTHER | 2.7 V | - | ASYNCHRONOUS | 0.05 mA | 64KX16 | 3-STATE | 1.2 mm | 16 | 0.000028 A | 1048576 bit | - | - | PARALLEL | COMMON | STANDARD SRAM | - | - | - | - | - | - | 2 V | - | - | - | - | - | - | - | - | - | - | - | - | 18.41 mm | 10.16 mm | ||
| CXK5T16100TM-12LLX | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #P4C188-15PCElecinsight Part #799-535-P4C188-15PC | Pyramid Semiconductor Corporation |
Standard SRAM, 16KX4, 15ns, CMOS, PDIP22, 0.300 INCH, PLASTIC, DIP-22
Datasheet
Compare
| Min.:1 Mult.:1 | NO | - | 22 | 15 ns | - | - | - | - | - | - | - | PYRAMID SEMICONDUCTOR CORP | - | - | - | - | 16384 words | 16000 | 70 °C | - | PLASTIC/EPOXY | DIP | 0.300 INCH, PLASTIC, DIP-22 | DIP22,.3 | RECTANGULAR | IN-LINE | Active | DIP | No | - | 5 V | - | - | - | - | - | e0 | No | EAR99 | - | TIN LEAD | - | 8542.32.00.41 | - | DUAL | THROUGH-HOLE | - | 1 | 2.54 mm | compliant | - | 22 | R-PDIP-T22 | Not Qualified | - | 5.5 V | COMMERCIAL | 4.5 V | - | ASYNCHRONOUS | 0.16 mA | 16KX4 | 3-STATE | 5.334 mm | 4 | 0.015 A | 65536 bit | - | - | PARALLEL | COMMON | STANDARD SRAM | - | - | - | - | - | - | 4.5 V | - | - | - | - | - | - | - | - | - | - | - | - | 29.337 mm | 7.62 mm | ||
| P4C188-15PC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #SCB25D1G160AF-5BIElecinsight Part #799-535-SCB25D1G160AF-5BI | Xi'an UniIC Semiconductors Co Ltd |
Description: DDR DRAM,
Datasheet
Compare
| Min.:1 Mult.:1 | YES | - | 60 | 0.7 ns | - | - | - | - | - | 200 MHz | - | XIAN UNILC SEMICONDUCTORS CO LTD | - | - | - | - | 67108864 words | 64000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA60,9X12,40/32 | BGA60,9X12,40/32 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | Contact Manufacturer | - | - | - | 2.5 V | - | - | - | - | - | - | - | EAR99 | - | - | - | 8542.32.00.32 | - | BOTTOM | BALL | - | 1 | 1 mm | unknown | - | - | R-PBGA-B60 | - | - | 2.7 V | INDUSTRIAL | 2.3 V | 1 | SYNCHRONOUS | 0.26 mA | 64MX16 | 3-STATE | 1.2 mm | 16 | 0.012 A | 1073741824 bit | - | - | - | COMMON | DDR1 DRAM | - | - | - | - | - | - | 2.3 V | - | - | - | - | 8192 | - | 2,4,8 | 2,4,8 | DUAL BANK PAGE BURST | - | YES | - | 12 mm | 10 mm | ||
| SCB25D1G160AF-5BI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #P4C198A-30CMBElecinsight Part #799-535-P4C198A-30CMB | Pyramid Semiconductor Corporation |
Standard SRAM, 16KX4, 30ns, CMOS, CDIP24
Datasheet
Compare
| Min.:1 Mult.:1 | NO | - | 24 | 30 ns | - | - | - | - | - | - | - | PERFORMANCE SEMICONDUCTOR CORP | - | - | - | - | 16384 words | 16000 | 125 °C | -55 °C | CERAMIC | DIP | DIP, DIP24,.3 | DIP24,.3 | RECTANGULAR | IN-LINE | Obsolete | - | No | - | 5 V | - | - | - | - | - | e0 | - | 3A001.A.2.C | - | Tin/Lead (Sn/Pb) | - | 8542.32.00.41 | - | DUAL | THROUGH-HOLE | - | - | 2.54 mm | unknown | - | - | R-XDIP-T24 | Not Qualified | - | - | MILITARY | - | - | ASYNCHRONOUS | 0.12 mA | 16KX4 | 3-STATE | - | 4 | 0.02 A | 65536 bit | 38535Q/M;38534H;883B | - | PARALLEL | COMMON | STANDARD SRAM | - | - | - | - | - | - | 4.5 V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| P4C198A-30CMB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #CAT24FC32JIElecinsight Part #799-535-CAT24FC32JI | Catalyst Semiconductor |
Description: EEPROM, 4KX8, Serial, CMOS, PDSO8, SOIC-8
Datasheet
Compare
| Min.:1 Mult.:1 | YES | - | 8 | - | - | - | - | - | - | 1 MHz | - | CATALYST SEMICONDUCTOR INC | - | - | - | - | 4096 words | 4000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP, SOP8,.25 | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOIC | No | - | 5 V | - | - | - | - | - | e0 | - | EAR99 | - | TIN LEAD | - | 8542.32.00.51 | - | DUAL | GULL WING | - | 1 | 1.27 mm | unknown | - | 8 | R-PDSO-G8 | Not Qualified | - | 5.5 V | INDUSTRIAL | 2.5 V | - | SYNCHRONOUS | 0.003 mA | 4KX8 | - | 1.75 mm | 8 | 0.000001 A | 32768 bit | - | - | SERIAL | - | EEPROM | - | I2C | 1000000 Write/Erase Cycles | 5 ms | 100 | HARDWARE | - | - | - | - | - | - | 1010DDDR | - | - | - | - | - | - | 4.9 mm | 3.9 mm | ||
| CAT24FC32JI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #SC22101CNElecinsight Part #799-535-SC22101CN | Sierra Semiconductor |
EEPROM, 128X8, 300ns, Parallel, CMOS, PDIP18,
Datasheet
Compare
| Min.:1 Mult.:1 | NO | - | 18 | 300 ns | - | - | - | - | - | - | - | SIERRA SEMICONDUCTOR | - | - | - | - | 128 words | 128 | 70 °C | - | PLASTIC/EPOXY | DIP | - | DIP18,.3 | RECTANGULAR | IN-LINE | Obsolete | - | No | - | 5 V | - | - | - | - | - | e0 | - | - | - | Tin/Lead (Sn/Pb) | - | - | - | DUAL | THROUGH-HOLE | - | 1 | 2.54 mm | unknown | - | - | R-PDIP-T18 | Not Qualified | - | 5.5 V | COMMERCIAL | 4.5 V | - | ASYNCHRONOUS | 0.015 mA | 128X8 | 3-STATE | - | 8 | 0.0001 A | 1024 bit | - | - | PARALLEL | - | EEPROM | 5 V | - | - | 20 ms | - | - | - | YES | NO | NO | - | - | - | - | - | - | - | - | - | - | - | ||
| SC22101CN | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #HXI15H4G160AF-13KElecinsight Part #799-535-HXI15H4G160AF-13K | Xi'an UniIC Semiconductors Co Ltd |
DDR DRAM,
Datasheet
Compare
| Min.:1 Mult.:1 | YES | 0.1 kg | 96 | - | POS40 | KAF | 0805 | 2012 | Cleaning with alcohol-based solution | - | 110.00 | XIAN UNILC SEMICONDUCTORS CO LTD | MLCC | 183...240 °C | - | SMD | 268435456 words | 256000000 | 95 °C | -40 °C | PLASTIC/EPOXY | TFBGA | TFBGA, | - | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Contact Manufacturer | - | - | 285...330 °C | 1.5 V | 42*28*18.5/100 | ceramic | -55...125°C | coil | ±10% | - | - | EAR99 | Soft lead-tin solder Sn/Pb with flux | - | AUTO/SELF REFRESH | 8542.32.00.36 | 1µF | BOTTOM | BALL | - | 1 | 0.8 mm | unknown | - | - | R-PBGA-B96 | - | X7R | 1.575 V | INDUSTRIAL | 1.425 V | 1 | SYNCHRONOUS | - | 256MX16 | - | 1.2 mm | 16 | - | 4294967296 bit | - | tube | - | - | DDR DRAM | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | MULTI BANK PAGE BURST | 10V | YES | 0.3 mm | 13.5 mm | 9 mm | ||
| HXI15H4G160AF-13K | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #CAT24FC64WIElecinsight Part #799-535-CAT24FC64WI | Catalyst Semiconductor |
EEPROM, 8KX8, Serial, CMOS, PDSO8, LEAD AND HALOGEN FREE, SOIC-8
Datasheet
Compare
| Min.:1 Mult.:1 | YES | - | 8 | - | - | - | - | - | - | 1 MHz | - | CATALYST SEMICONDUCTOR INC | - | - | - | - | 8192 words | 8000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP, SOP8,.25 | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOIC | Yes | - | 3 V | - | - | - | - | - | e3 | Yes | EAR99 | - | MATTE TIN | - | 8542.32.00.51 | - | DUAL | GULL WING | - | 1 | 1.27 mm | unknown | - | 8 | R-PDSO-G8 | Not Qualified | - | 5.5 V | INDUSTRIAL | 2.5 V | - | SYNCHRONOUS | 0.003 mA | 8KX8 | - | 1.75 mm | 8 | 0.000001 A | 65536 bit | - | - | SERIAL | - | EEPROM | - | I2C | 1000000 Write/Erase Cycles | 5 ms | 100 | HARDWARE | - | - | - | - | - | - | 1010DDDR | - | - | - | - | - | - | 4.9 mm | 3.9 mm | ||
| CAT24FC64WI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #M14D5121632A-1.5BG2MElecinsight Part #799-535-M14D5121632A-1.5BG2M | Elite Semiconductor Memory Technology Inc |
DDR DRAM,
Datasheet
Compare
| Min.:1 Mult.:1 | YES | - | 84 | 0.35 ns | - | - | - | - | - | - | - | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | - | - | - | - | 33554432 words | 32000000 | 95 °C | - | PLASTIC/EPOXY | TFBGA | TFBGA, | - | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Contact Manufacturer | - | Yes | - | 1.8 V | - | - | - | - | - | - | - | EAR99 | - | - | AUTO/SELF REFRESH | 8542.32.00.28 | - | BOTTOM | BALL | NOT SPECIFIED | 1 | 0.8 mm | unknown | NOT SPECIFIED | - | R-PBGA-B84 | - | - | 1.9 V | OTHER | 1.7 V | 1 | SYNCHRONOUS | - | 32MX16 | - | 1.2 mm | 16 | - | 536870912 bit | - | - | - | - | DDR DRAM | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | FOUR BANK PAGE BURST | - | YES | - | 12.5 mm | 8 mm | ||
| M14D5121632A-1.5BG2M 799-535-M14D5121632A-1.5BG2M Elite Semiconductor Memory Technology Inc
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![]() | Mfr. Part #SCB33S128160AE-6BIElecinsight Part #799-535-SCB33S128160AE-6BI | Xi'an UniIC Semiconductors Co Ltd |
Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, TSOP2-54
Datasheet
Compare
| Min.:1 Mult.:1 | YES | - | 54 | 5.4 ns | - | - | - | - | - | - | - | XIAN UNILC SEMICONDUCTORS CO LTD | - | - | - | - | 8388608 words | 8000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, | - | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Contact Manufacturer | - | Yes | - | 3.3 V | - | - | - | - | - | - | - | EAR99 | - | - | AUTO/SELF REFRESH | 8542.32.00.02 | - | DUAL | GULL WING | NOT SPECIFIED | 1 | 0.8 mm | compliant | NOT SPECIFIED | - | R-PDSO-G54 | - | - | 3.6 V | INDUSTRIAL | 3 V | 1 | SYNCHRONOUS | - | 8MX16 | - | 1.2 mm | 16 | - | 134217728 bit | - | - | - | - | SYNCHRONOUS DRAM | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | FOUR BANK PAGE BURST | - | YES | - | 22.22 mm | 10.16 mm | ||
| SCB33S128160AE-6BI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #CAT24C00YEElecinsight Part #799-535-CAT24C00YE | Catalyst Semiconductor |
EEPROM, 16X8, Serial, CMOS, PDSO8, LEAD AND HALOGEN FREE, TSSOP-8
Datasheet
Compare
| Min.:1 Mult.:1 | YES | - | 8 | - | - | - | - | - | - | 0.1 MHz | - | CATALYST SEMICONDUCTOR INC | - | - | - | - | 16 words | 16 | 125 °C | -40 °C | PLASTIC/EPOXY | TSSOP | TSSOP, TSSOP8,.25 | TSSOP8,.25 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Obsolete | SOIC | Yes | - | 3 V | - | - | - | - | - | e3 | - | EAR99 | - | MATTE TIN | - | 8542.32.00.51 | - | DUAL | GULL WING | - | 1 | 0.65 mm | unknown | - | 8 | R-PDSO-G8 | Not Qualified | - | 5.5 V | AUTOMOTIVE | 1.8 V | - | SYNCHRONOUS | 0.002 mA | 16X8 | - | 1.1 mm | 8 | 0.00001 A | 128 bit | - | - | SERIAL | - | EEPROM | - | I2C | 10000000 Write/Erase Cycles | 5 ms | 100 | - | - | - | - | - | - | - | 1010XXXR | - | - | - | - | - | - | 4.4 mm | 3 mm | ||
| CAT24C00YE | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #CAT25C16PElecinsight Part #799-535-CAT25C16P | Catalyst Semiconductor |
EEPROM, 2KX8, Serial, CMOS, PDIP8, PLASTIC, DIP-8
Datasheet
Compare
| Min.:1 Mult.:1 | NO | - | 8 | - | - | - | - | - | - | 5 MHz | - | CATALYST SEMICONDUCTOR INC | - | - | - | - | 2048 words | 2000 | 70 °C | - | PLASTIC/EPOXY | DIP | DIP, DIP8,.3 | DIP8,.3 | RECTANGULAR | IN-LINE | Obsolete | DIP | No | - | 5 V | - | - | - | - | - | e0 | No | EAR99 | - | TIN LEAD | 1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION | 8542.32.00.51 | - | DUAL | THROUGH-HOLE | - | 1 | 2.54 mm | unknown | - | 8 | R-PDIP-T8 | Not Qualified | - | 6 V | COMMERCIAL | 2.5 V | - | SYNCHRONOUS | 0.005 mA | 2KX8 | - | 4.57 mm | 8 | 0.000001 A | 16384 bit | AEC-Q100 | - | SERIAL | - | EEPROM | - | SPI | 1000000 Write/Erase Cycles | 5 ms | 100 | HARDWARE/SOFTWARE | - | - | - | - | - | - | - | - | - | - | - | - | - | 9.59 mm | 7.62 mm | ||
| CAT25C16P | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #M12L2561616A-6BIG2SElecinsight Part #799-535-M12L2561616A-6BIG2S | Elite Semiconductor Memory Technology Inc |
Description: Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 1 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIANT, BGA-54
Datasheet
Compare
| Min.:1 Mult.:1 | YES | - | 54 | 5.4 ns | - | - | - | - | - | - | - | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | - | - | - | - | 16777216 words | 16000000 | 85 °C | -40 °C | PLASTIC/EPOXY | VFBGA | VFBGA, | - | SQUARE | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | Contact Manufacturer | - | - | - | 3.3 V | - | - | - | - | - | - | - | EAR99 | - | - | AUTO/SELF REFRESH | 8542.32.00.24 | - | BOTTOM | BALL | - | 1 | 0.8 mm | unknown | - | - | S-PBGA-B54 | - | - | 3.6 V | INDUSTRIAL | 3 V | 1 | SYNCHRONOUS | - | 16MX16 | - | 1 mm | 16 | - | 268435456 bit | - | - | - | - | SYNCHRONOUS DRAM | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | FOUR BANK PAGE BURST | - | YES | - | 8 mm | 8 mm | ||
| M12L2561616A-6BIG2S 799-535-M12L2561616A-6BIG2S Elite Semiconductor Memory Technology Inc
RoHS :
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