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Image Part # Manufacturer Description Pricing Quantity RoHS Surface Mount Number of Terminals Access Time-Max Clock Frequency-Max (fCLK) Ihs Manufacturer Moisture Sensitivity Levels Number of Words Number of Words Code Operating Temperature-Max Operating Temperature-Min Package Body Material Package Code Package Description Package Equivalence Code Package Shape Package Style Part Life Cycle Code Part Package Code Rohs Code Supply Voltage-Nom (Vsup) JESD-609 Code Pbfree Code ECCN Code Terminal Finish Additional Feature HTS Code Terminal Position Terminal Form Peak Reflow Temperature (Cel) Number of Functions Terminal Pitch Reach Compliance Code Time@Peak Reflow Temperature-Max (s) Pin Count JESD-30 Code Qualification Status Supply Voltage-Max (Vsup) Temperature Grade Supply Voltage-Min (Vsup) Number of Ports Operating Mode Supply Current-Max Organization Output Characteristics Seated Height-Max Memory Width Standby Current-Max Memory Density Screening Level Parallel/Serial I/O Type Memory IC Type Serial Bus Type Endurance Write Cycle Time-Max (tWC) Data Retention Time-Min Write Protection Standby Voltage-Min Alternate Memory Width Output Enable I2C Control Byte Access Mode Reverse Pinout Self Refresh Length Width
Catalyst Semiconductor CAT25C32V
Mfr. Part #
CAT25C32V
Elecinsight Part #
799-535-CAT25C32V
Catalyst Semiconductor
Description: EEPROM, 4KX8, Serial, CMOS, PDSO8, LEAD FREE AND HALOGEN FREE, SOIC-8
Datasheet Compare
    Min.:1
    Mult.:1
    		 YES 8 - 3 MHz CATALYST SEMICONDUCTOR INC - 4096 words 4000 70 °C - PLASTIC/EPOXY SOP SOP, SOP8,.25 SOP8,.25 RECTANGULAR SMALL OUTLINE Obsolete SOIC Yes 5 V e3 Yes EAR99 MATTE TIN - 8542.32.00.51 DUAL GULL WING - 1 1.27 mm unknown - 8 R-PDSO-G8 Not Qualified 6 V COMMERCIAL 2.5 V - SYNCHRONOUS 0.01 mA 4KX8 - 1.75 mm 8 0.000001 A 32768 bit - SERIAL - EEPROM SPI 1000000 Write/Erase Cycles 10 ms 100 HARDWARE/SOFTWARE - - - - - - - 4.9 mm 3.9 mm
    CAT25C32V
    CAT25C32V

    799-535-CAT25C32V Catalyst Semiconductor
    RoHS :
    Package : -
    In Stock : -
    1 : -
    Catalyst Semiconductor CAT93C56KI
    Mfr. Part #
    CAT93C56KI
    Elecinsight Part #
    799-535-CAT93C56KI
    		Catalyst Semiconductor
    EEPROM, 128X16, Serial, CMOS, PDSO8, EIAJ, SOIC-8
    Datasheet Compare
      Min.:1
      Mult.:1
      		 YES 8 - 0.5 MHz CATALYST SEMICONDUCTOR INC - 128 words 128 85 °C -40 °C PLASTIC/EPOXY SOP SOP, SOP8,.3 SOP8,.3 RECTANGULAR SMALL OUTLINE Transferred SOIC No 5 V e0 No EAR99 TIN LEAD 1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION 8542.32.00.51 DUAL GULL WING - 1 1.27 mm unknown - 8 R-PDSO-G8 Not Qualified 6 V INDUSTRIAL 2.5 V - SYNCHRONOUS 0.003 mA 128X16 - 2.03 mm 16 0.00001 A 2048 bit - SERIAL - EEPROM MICROWIRE 1000000 Write/Erase Cycles 10 ms 100 SOFTWARE - 8 - - - - - 5.3 mm 5.25 mm
      CAT93C56KI
      CAT93C56KI

      799-535-CAT93C56KI Catalyst Semiconductor
      RoHS :
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      Sony Semiconductor CXK5V8257BYM-85LLX
      Mfr. Part #
      CXK5V8257BYM-85LLX
      Elecinsight Part #
      799-535-CXK5V8257BYM-85LLX
      		Sony Semiconductor
      Description: Standard SRAM, 32KX8, 85ns, CMOS, PDSO28, TSOP-28
      Datasheet Compare
        Min.:1
        Mult.:1
        		 YES 28 85 ns - SONY CORP - 32768 words 32000 85 °C -25 °C PLASTIC/EPOXY TSOP1 TSOP1, TSSOP28,.53,22 TSSOP28,.53,22 RECTANGULAR SMALL OUTLINE, THIN PROFILE Obsolete - No 3.3 V e0 - EAR99 Tin/Lead (Sn/Pb) - 8542.32.00.41 DUAL GULL WING - 1 0.55 mm unknown - - R-PDSO-G28 Not Qualified 3.6 V OTHER 3 V - ASYNCHRONOUS 0.04 mA 32KX8 3-STATE 1.2 mm 8 0.000007 A 262144 bit - PARALLEL COMMON STANDARD SRAM - - - - - 2 V - - - - YES - 11.8 mm 8 mm
        CXK5V8257BYM-85LLX
        CXK5V8257BYM-85LLX

        799-535-CXK5V8257BYM-85LLX Sony Semiconductor
        RoHS :
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        Xi'an UniIC Semiconductors Co Ltd SCB33S128320AE-6BI
        Mfr. Part #
        SCB33S128320AE-6BI
        Elecinsight Part #
        799-535-SCB33S128320AE-6BI
        		Xi'an UniIC Semiconductors Co Ltd
        Description: Synchronous DRAM, 4MX32, 5.4ns, CMOS, PDSO86, TSOP2-86
        Datasheet Compare
          Min.:1
          Mult.:1
          		 YES 86 5.4 ns - XIAN UNILC SEMICONDUCTORS CO LTD - 4194304 words 4000000 85 °C -40 °C PLASTIC/EPOXY TSOP2 TSOP2, - RECTANGULAR SMALL OUTLINE, THIN PROFILE Contact Manufacturer - Yes 3.3 V - - EAR99 - AUTO/SELF REFRESH 8542.32.00.02 DUAL GULL WING NOT SPECIFIED 1 0.5 mm compliant NOT SPECIFIED - R-PDSO-G86 - 3.6 V INDUSTRIAL 3 V 1 SYNCHRONOUS - 4MX32 - 1.2 mm 32 - 134217728 bit - - - SYNCHRONOUS DRAM - - - - - - - - - FOUR BANK PAGE BURST - YES 22.22 mm 10.16 mm
          SCB33S128320AE-6BI
          SCB33S128320AE-6BI

          799-535-SCB33S128320AE-6BI Xi'an UniIC Semiconductors Co Ltd
          RoHS :
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          Catalyst Semiconductor CAT64LC20JI-TE13
          Mfr. Part #
          CAT64LC20JI-TE13
          Elecinsight Part #
          799-535-CAT64LC20JI-TE13
          		Catalyst Semiconductor
          EEPROM, 128X16, Serial, CMOS, PDSO8, SOIC-8
          Datasheet Compare
            Min.:1
            Mult.:1
            		 YES 8 - 1 MHz CATALYST SEMICONDUCTOR INC - 128 words 128 85 °C -40 °C PLASTIC/EPOXY SOP SOP, SOP8,.25 SOP8,.25 RECTANGULAR SMALL OUTLINE Obsolete SOIC No 3.3 V e0 - EAR99 TIN LEAD SPI BUS SERIAL INTERFACE; AUTOMATIC WRITE 8542.32.00.51 DUAL GULL WING - 1 1.27 mm unknown - 8 R-PDSO-G8 Not Qualified 6 V INDUSTRIAL 2.5 V - SYNCHRONOUS 0.003 mA 128X16 3-STATE 1.75 mm 16 0.000003 A 2048 bit - SERIAL - EEPROM SPI 1000000 Write/Erase Cycles 10 ms 100 HARDWARE/SOFTWARE - - - - - - - 4.9 mm 3.9 mm
            CAT64LC20JI-TE13
            CAT64LC20JI-TE13

            799-535-CAT64LC20JI-TE13 Catalyst Semiconductor
            RoHS :
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            Catalyst Semiconductor CAT34WC02PI-1.8
            Mfr. Part #
            CAT34WC02PI-1.8
            Elecinsight Part #
            799-535-CAT34WC02PI-1.8
            		Catalyst Semiconductor
            EEPROM, 256X8, Serial, CMOS, PDIP8, PLASTIC, DIP-8
            Datasheet Compare
              Min.:1
              Mult.:1
              		 NO 8 - 0.1 MHz CATALYST SEMICONDUCTOR INC - 256 words 256 85 °C -40 °C PLASTIC/EPOXY DIP DIP, DIP8,.3 DIP8,.3 RECTANGULAR IN-LINE Obsolete DIP No 5 V e0 - EAR99 TIN LEAD 1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION; HARDWARE WRITE PROTECT 8542.32.00.51 DUAL THROUGH-HOLE - 1 2.54 mm unknown - 8 R-PDIP-T8 Not Qualified 6 V INDUSTRIAL 1.8 V - SYNCHRONOUS 0.003 mA 256X8 - 4.57 mm 8 0.0009 A 2048 bit - SERIAL - EEPROM I2C 1000000 Write/Erase Cycles 10 ms 100 HARDWARE/SOFTWARE - - - 1010DDDR - - - 9.27 mm 7.62 mm
              CAT34WC02PI-1.8
              CAT34WC02PI-1.8

              799-535-CAT34WC02PI-1.8 Catalyst Semiconductor
              RoHS :
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              Elite Semiconductor Memory Technology Inc M15F1G1664A-ADBG
              Mfr. Part #
              M15F1G1664A-ADBG
              Elecinsight Part #
              799-535-M15F1G1664A-ADBG
              		Elite Semiconductor Memory Technology Inc
              Description: DDR DRAM, 64MX16, CMOS, PBGA96, 0.80 MM PITCH, ROHS COMPLIANT, BGA-96
              Datasheet Compare
                Min.:1
                Mult.:1
                		 YES 96 - - ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC - 67108864 words 64000000 85 °C - PLASTIC/EPOXY TFBGA TFBGA, - RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH Contact Manufacturer - - 1.5 V - - EAR99 - AUTO/SELF REFRESH 8542.32.00.32 BOTTOM BALL - 1 0.8 mm unknown - - R-PBGA-B96 - 1.575 V OTHER 1.425 V 1 SYNCHRONOUS - 64MX16 - 1.2 mm 16 - 1073741824 bit - - - DDR3 DRAM - - - - - - - - - MULTI BANK PAGE BURST - YES 13 mm 9 mm
                M15F1G1664A-ADBG
                M15F1G1664A-ADBG

                799-535-M15F1G1664A-ADBG Elite Semiconductor Memory Technology Inc
                RoHS :
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                In Stock : -
                1 : -
                SGS Semiconductor Ltd ST93C46AM1013TR
                Mfr. Part #
                ST93C46AM1013TR
                Elecinsight Part #
                799-535-ST93C46AM1013TR
                		SGS Semiconductor Ltd
                -
                Datasheet Compare
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                  Mult.:1
                  		 - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
                  ST93C46AM1013TR
                  ST93C46AM1013TR

                  799-535-ST93C46AM1013TR SGS Semiconductor Ltd
                  RoHS :
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                  Pyramid Semiconductor Corporation P4C1981-20CC
                  Mfr. Part #
                  P4C1981-20CC
                  Elecinsight Part #
                  799-535-P4C1981-20CC
                  		Pyramid Semiconductor Corporation
                  Description: Standard SRAM, 16KX4, 20ns, CMOS, CDIP28
                  Datasheet Compare
                    Min.:1
                    Mult.:1
                    		 NO 28 20 ns - PERFORMANCE SEMICONDUCTOR CORP - 16384 words 16000 70 °C - CERAMIC DIP DIP, DIP28,.3 DIP28,.3 RECTANGULAR IN-LINE Obsolete - No 5 V e0 - EAR99 Tin/Lead (Sn/Pb) - 8542.32.00.41 DUAL THROUGH-HOLE - - 2.54 mm unknown - - R-XDIP-T28 Not Qualified - COMMERCIAL - - ASYNCHRONOUS 0.1 mA 16KX4 3-STATE - 4 0.015 A 65536 bit - PARALLEL SEPARATE STANDARD SRAM - - - - - 4.5 V - - - - - - - -
                    P4C1981-20CC
                    P4C1981-20CC

                    799-535-P4C1981-20CC Pyramid Semiconductor Corporation
                    RoHS :
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                    In Stock : -
                    1 : -
                    Catalyst Semiconductor CAT24C01P-2.7
                    Mfr. Part #
                    CAT24C01P-2.7
                    Elecinsight Part #
                    799-535-CAT24C01P-2.7
                    		Catalyst Semiconductor
                    EEPROM, 128X8, Serial, CMOS, PDIP8, 0.300 INCH, PLASTIC, DIP-8
                    Datasheet Compare
                      Min.:1
                      Mult.:1
                      		 NO 8 - 0.1 MHz CATALYST SEMICONDUCTOR INC - 128 words 128 70 °C - PLASTIC/EPOXY DIP DIP, DIP8,.3 DIP8,.3 RECTANGULAR IN-LINE Obsolete DIP No 5 V e0 No EAR99 TIN LEAD I2C BUS SERIAL INTERFACE; AUTOMATIC WRITE 8542.32.00.51 DUAL THROUGH-HOLE - 1 2.54 mm unknown - 8 R-PDIP-T8 Not Qualified 6 V COMMERCIAL 2.7 V - SYNCHRONOUS 0.003 mA 128X8 OPEN-DRAIN 4.57 mm 8 9e-7 A 1024 bit - SERIAL - EEPROM I2C 1000000 Write/Erase Cycles 10 ms 100 - - - - 1010DDDR - - - 9.36 mm 7.62 mm
                      CAT24C01P-2.7
                      CAT24C01P-2.7

                      799-535-CAT24C01P-2.7 Catalyst Semiconductor
                      RoHS :
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                      1 : -
                      Catalyst Semiconductor CAT24C44GVE-TE13
                      Mfr. Part #
                      CAT24C44GVE-TE13
                      Elecinsight Part #
                      799-535-CAT24C44GVE-TE13
                      		Catalyst Semiconductor
                      Non-Volatile SRAM, 16X16, 375ns, CMOS, PDSO8, GREEN, SOIC-8
                      Datasheet Compare
                        Min.:1
                        Mult.:1
                        		 YES 8 375 ns - CATALYST SEMICONDUCTOR INC - 16 words 16 125 °C -40 °C PLASTIC/EPOXY SOP SOP, SOP8,.25 SOP8,.25 RECTANGULAR SMALL OUTLINE Transferred SOIC Yes 5 V e4 - EAR99 NICKEL PALLADIUM GOLD - 8542.32.00.41 DUAL GULL WING - 1 1.27 mm unknown - 8 R-PDSO-G8 Not Qualified 5.5 V AUTOMOTIVE 4.5 V - SYNCHRONOUS 0.003 mA 16X16 - 1.75 mm 16 0.00003 A 256 bit - SERIAL - NON-VOLATILE SRAM - - - - - - - - - - - - 4.9 mm 3.9 mm
                        CAT24C44GVE-TE13
                        CAT24C44GVE-TE13

                        799-535-CAT24C44GVE-TE13 Catalyst Semiconductor
                        RoHS :
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                        Elite Semiconductor Memory Technology Inc M12L2561616A-6TG
                        Mfr. Part #
                        M12L2561616A-6TG
                        Elecinsight Part #
                        799-535-M12L2561616A-6TG
                        		Elite Semiconductor Memory Technology Inc
                        Description: Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, TSOP2-54
                        Datasheet Compare
                          Min.:1
                          Mult.:1
                          		 YES 54 5.4 ns - ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC - 16777216 words 16000000 70 °C - PLASTIC/EPOXY TSOP2 TSOP2, - RECTANGULAR SMALL OUTLINE, THIN PROFILE Active TSOP2 - 3.3 V - - EAR99 - AUTO/SELF REFRESH 8542.32.00.24 DUAL GULL WING NOT SPECIFIED 1 0.8 mm unknown NOT SPECIFIED 54 R-PDSO-G54 Not Qualified 3.6 V COMMERCIAL 3 V 1 SYNCHRONOUS - 16MX16 - 1.2 mm 16 - 268435456 bit - - - SYNCHRONOUS DRAM - - - - - - - - - FOUR BANK PAGE BURST - YES 22.22 mm 10.16 mm
                          M12L2561616A-6TG
                          M12L2561616A-6TG

                          799-535-M12L2561616A-6TG Elite Semiconductor Memory Technology Inc
                          RoHS :
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                          Music Semiconductors Inc MU9C1640-55DC
                          Mfr. Part #
                          MU9C1640-55DC
                          Elecinsight Part #
                          799-535-MU9C1640-55DC
                          		Music Semiconductors Inc
                          Description: Content Addressable SRAM, 1KX64, 85ns, CMOS, PQCC44
                          Datasheet Compare
                            Min.:1
                            Mult.:1
                            		 YES 44 85 ns - MUSIC SEMICONDUCTORS INC 3 1024 words 1000 70 °C - PLASTIC/EPOXY QCCJ QCCJ, LDCC44,.7SQ LDCC44,.7SQ SQUARE CHIP CARRIER Obsolete - No 5 V e0 No EAR99 TIN LEAD BIT MASKING; CACHECAM 8542.32.00.41 QUAD J BEND - 1 1.27 mm unknown - - S-PQCC-J44 Not Qualified 5.5 V COMMERCIAL 4.5 V 1 ASYNCHRONOUS 0.2 mA 1KX64 3-STATE - 64 0.2 A 65536 bit - PARALLEL - CONTENT ADDRESSABLE SRAM - - - - - - - NO - - - - - -
                            MU9C1640-55DC
                            MU9C1640-55DC

                            799-535-MU9C1640-55DC Music Semiconductors Inc
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                            Pyramid Semiconductor Corporation P4C1682-35PC
                            Mfr. Part #
                            P4C1682-35PC
                            Elecinsight Part #
                            799-535-P4C1682-35PC
                            		Pyramid Semiconductor Corporation
                            Standard SRAM, 4KX4, 35ns, CMOS, PDIP24, PLASTIC, DIP-24
                            Datasheet Compare
                              Min.:1
                              Mult.:1
                              		 NO 24 35 ns - PYRAMID SEMICONDUCTOR CORP - 4096 words 4000 70 °C - PLASTIC/EPOXY DIP PLASTIC, DIP-24 - RECTANGULAR IN-LINE Active DIP No 5 V e0 No EAR99 TIN LEAD TRISTATE WRITE 8542.32.00.41 DUAL THROUGH-HOLE - 1 2.54 mm compliant - 24 R-PDIP-T24 Not Qualified 5.5 V COMMERCIAL 4.5 V - ASYNCHRONOUS - 4KX4 - 4.318 mm 4 - 16384 bit - PARALLEL - STANDARD SRAM - - - - - - - - - - - - 31.9405 mm 7.62 mm
                              P4C1682-35PC
                              P4C1682-35PC

                              799-535-P4C1682-35PC Pyramid Semiconductor Corporation
                              RoHS :
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                              Elite Semiconductor Memory Technology Inc M12L2561616A-6TG2K
                              Mfr. Part #
                              M12L2561616A-6TG2K
                              Elecinsight Part #
                              799-535-M12L2561616A-6TG2K
                              		Elite Semiconductor Memory Technology Inc
                              Description: Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54
                              Datasheet Compare
                                Min.:1
                                Mult.:1
                                		 YES 54 5.4 ns - ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC - 16777216 words 16000000 70 °C - PLASTIC/EPOXY TSOP2 TSOP2, - RECTANGULAR SMALL OUTLINE, THIN PROFILE Contact Manufacturer - - 3.3 V - - EAR99 - AUTO/SELF REFRESH 8542.32.00.24 DUAL GULL WING - 1 0.8 mm unknown - - R-PDSO-G54 - 3.6 V COMMERCIAL 3 V 1 SYNCHRONOUS - 16MX16 - 1.2 mm 16 - 268435456 bit - - - SYNCHRONOUS DRAM - - - - - - - - - FOUR BANK PAGE BURST - YES 22.22 mm 10.16 mm
                                M12L2561616A-6TG2K
                                M12L2561616A-6TG2K

                                799-535-M12L2561616A-6TG2K Elite Semiconductor Memory Technology Inc
                                RoHS :
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                                Pyramid Semiconductor Corporation P4C164-35JC
                                Mfr. Part #
                                P4C164-35JC
                                Elecinsight Part #
                                799-535-P4C164-35JC
                                		Pyramid Semiconductor Corporation
                                Description: Standard SRAM, 8KX8, 35ns, CMOS, PDSO28, 0.300 INCH, SOJ-28
                                Datasheet Compare
                                  Min.:1
                                  Mult.:1
                                  		 YES 28 35 ns - PYRAMID SEMICONDUCTOR CORP - 8192 words 8000 70 °C - PLASTIC/EPOXY SOJ SOJ, SOJ28,.34 SOJ28,.34 RECTANGULAR SMALL OUTLINE Active SOJ No 5 V e0 No EAR99 TIN LEAD - 8542.32.00.41 DUAL J BEND - 1 1.27 mm compliant - 28 R-PDSO-J28 Not Qualified 5.5 V COMMERCIAL 4.5 V - ASYNCHRONOUS 0.145 mA 8KX8 3-STATE 3.7592 mm 8 0.015 A 65536 bit - PARALLEL COMMON STANDARD SRAM - - - - - 4.5 V - - - - - - 18.161 mm 7.5184 mm
                                  P4C164-35JC
                                  P4C164-35JC

                                  799-535-P4C164-35JC Pyramid Semiconductor Corporation
                                  RoHS :
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                                  1 : -
                                  Pyramid Semiconductor Corporation P4C187-25CMB
                                  Mfr. Part #
                                  P4C187-25CMB
                                  Elecinsight Part #
                                  799-535-P4C187-25CMB
                                  		Pyramid Semiconductor Corporation
                                  Description: Standard SRAM, 64KX1, 25ns, CMOS, CDIP22, 0.300 INCH, SIDE BRAZED, CERAMIC, DIP-22
                                  Datasheet Compare
                                    Min.:1
                                    Mult.:1
                                    		 NO 22 25 ns - PYRAMID SEMICONDUCTOR CORP - 65536 words 64000 125 °C -55 °C CERAMIC, METAL-SEALED COFIRED DIP 0.300 INCH, SIDE BRAZED, CERAMIC, DIP-22 - RECTANGULAR IN-LINE Active DIP No 5 V e0 No 3A001.A.2.C TIN LEAD - 8542.32.00.41 DUAL THROUGH-HOLE - 1 2.54 mm compliant - 22 R-CDIP-T22 Not Qualified 5.5 V MILITARY 4.5 V - ASYNCHRONOUS 0.155 mA 64KX1 - 5.08 mm 1 - 65536 bit MIL-STD-883 Class B PARALLEL - STANDARD SRAM - - - - - - - - - - - - 29.337 mm 7.62 mm
                                    P4C187-25CMB
                                    P4C187-25CMB

                                    799-535-P4C187-25CMB Pyramid Semiconductor Corporation
                                    RoHS :
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                                    Xi'an UniIC Semiconductors Co Ltd HXB15H4G800AF-13K
                                    Mfr. Part #
                                    HXB15H4G800AF-13K
                                    Elecinsight Part #
                                    799-535-HXB15H4G800AF-13K
                                    		Xi'an UniIC Semiconductors Co Ltd
                                    DDR DRAM,
                                    Datasheet Compare
                                      Min.:1
                                      Mult.:1
                                      		 YES 78 - - XIAN UNILC SEMICONDUCTORS CO LTD - 536870912 words 512000000 95 °C - PLASTIC/EPOXY TFBGA TFBGA, - RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH Contact Manufacturer - - 1.5 V - - EAR99 - AUTO/SELF REFRESH 8542.32.00.36 BOTTOM BALL - 1 0.8 mm unknown - - R-PBGA-B78 - 1.575 V OTHER 1.425 V 1 SYNCHRONOUS - 512MX8 - 1.2 mm 8 - 4294967296 bit - - - DDR DRAM - - - - - - - - - MULTI BANK PAGE BURST - YES 10.6 mm 9 mm
                                      HXB15H4G800AF-13K
                                      HXB15H4G800AF-13K

                                      799-535-HXB15H4G800AF-13K Xi'an UniIC Semiconductors Co Ltd
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                                      Pyramid Semiconductor Corporation P4C1982-25CC
                                      Mfr. Part #
                                      P4C1982-25CC
                                      Elecinsight Part #
                                      799-535-P4C1982-25CC
                                      		Pyramid Semiconductor Corporation
                                      Standard SRAM, 16KX4, 25ns, CMOS, CDIP28
                                      Datasheet Compare
                                        Min.:1
                                        Mult.:1
                                        		 NO 28 25 ns - PERFORMANCE SEMICONDUCTOR CORP - 16384 words 16000 70 °C - CERAMIC DIP DIP, DIP28,.3 DIP28,.3 RECTANGULAR IN-LINE Obsolete - No 5 V e0 - EAR99 Tin/Lead (Sn/Pb) - 8542.32.00.41 DUAL THROUGH-HOLE - - 2.54 mm unknown - - R-XDIP-T28 Not Qualified - COMMERCIAL - - ASYNCHRONOUS 0.1 mA 16KX4 3-STATE - 4 0.015 A 65536 bit - PARALLEL SEPARATE STANDARD SRAM - - - - - 4.5 V - - - - - - - -
                                        P4C1982-25CC
                                        P4C1982-25CC

                                        799-535-P4C1982-25CC Pyramid Semiconductor Corporation
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                                        Xi'an UniIC Semiconductors Co Ltd HXB15H4G160AF-11M
                                        Mfr. Part #
                                        HXB15H4G160AF-11M
                                        Elecinsight Part #
                                        799-535-HXB15H4G160AF-11M
                                        		Xi'an UniIC Semiconductors Co Ltd
                                        DDR DRAM,
                                        Datasheet Compare
                                          Min.:1
                                          Mult.:1
                                          		 YES 96 - - XIAN UNILC SEMICONDUCTORS CO LTD - 268435456 words 256000000 95 °C - PLASTIC/EPOXY TFBGA TFBGA, - RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH Contact Manufacturer - - 1.5 V - - EAR99 - AUTO/SELF REFRESH 8542.32.00.36 BOTTOM BALL - 1 0.8 mm unknown - - R-PBGA-B96 - 1.575 V OTHER 1.425 V 1 SYNCHRONOUS - 256MX16 - 1.2 mm 16 - 4294967296 bit - - - DDR DRAM - - - - - - - - - MULTI BANK PAGE BURST - YES 13.5 mm 9 mm
                                          HXB15H4G160AF-11M
                                          HXB15H4G160AF-11M

                                          799-535-HXB15H4G160AF-11M Xi'an UniIC Semiconductors Co Ltd
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                                          Integrated Circuits (ICs)

                                          Memory definition: Memory is a component used to store programs and various data information. A memory cell is actually a type of sequential logic circuit. A m... Memory Product Listing: CAT25C32V,CAT93C56KI,CXK5V8257BYM-85LLX,SCB33S128320AE-6BI,CAT64LC20JI-TE13.Integrated Circuits (ICs) type:Embedded - Microcontrollers(134273),Memory(116337),PMIC - Voltage Regulators - Linear(107072),PMIC - Supervisors(101983),Embedded - FPGAs (Field Programmable Gate Array)(62862) .Memory has 168 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Elecinsight.