NXP Semiconductors N82S131F Memory Modules
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N82S131F Tech Specifications
| Category | Memory - Modules | |
| Manufacturer | NXP | |
| Surface Mount | NO | |
| Weight | 0.25 kg | |
| Number of Terminals | 16Terminals | |
| Equivalent | POS-60 | |
| Melting temperature | 183...190 °C | |
| Flux | - | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Access Time-Max | 50 ns | |
| Number of Words | 512 wordsWord | |
| Number of Words Code | 512Words Codes | |
| Operating Temperature-Max | 75 °C | |
| Package Body Material | CERAMIC, GLASS-SEALED | |
| Package Code | DIP | |
| Package Equivalence Code | DIP16,.3 | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Supply Voltage-Nom (Vsup) | 5 V | |
| Packaging | reel | |
| JESD-609 Code | e0 | |
| ECCN Code | EAR99 |
| Type | Soft tin-lead solder Sn/Pb | |
| Terminal Finish | TIN LEAD | |
| Composition | tin - 60%; lead - 40% | |
| HTS Code | 8542.32.00.71 | |
| Terminal Position | DUAL | |
| Terminal Form | THROUGH-HOLE | |
| Number of Functions | 1Function | |
| Terminal Pitch | 2.54 mm | |
| Reach Compliance Code | unknown | |
| JESD-30 Code | R-GDIP-T16 | |
| Qualification Status | Not Qualified | |
| Supply Voltage-Max (Vsup) | 5.25 V | |
| Temperature Grade | COMMERCIAL EXTENDED | |
| Supply Voltage-Min (Vsup) | 4.75 V | |
| Operating Mode | ASYNCHRONOUS | |
| Organization | 512X4 | |
| Output Characteristics | 3-STATE | |
| Memory Width | 4 | |
| Memory Density | 2048 bit | |
| Form | wire | |
| Parallel/Serial | PARALLEL | |
| Memory IC Type | OTP ROM | |
| Diameter | 0.5 mm |
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