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| Image | Part # | Manufacturer | Description | Pricing | Quantity | RoHS | Surface Mount | Number of Terminals | Access Time-Max | Clock Frequency-Max (fCLK) | Date Of Intro | Ihs Manufacturer | Moisture Sensitivity Levels | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Rohs Code | Supply Voltage-Nom (Vsup) | JESD-609 Code | ECCN Code | Type | Terminal Finish | Additional Feature | HTS Code | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | JESD-30 Code | Qualification Status | Supply Voltage-Max (Vsup) | Temperature Grade | Supply Voltage-Min (Vsup) | Operating Mode | Supply Current-Max | Organization | Output Characteristics | Seated Height-Max | Memory Width | Standby Current-Max | Memory Density | Parallel/Serial | Memory IC Type | Programming Voltage | Serial Bus Type | Endurance | Write Cycle Time-Max (tWC) | Data Retention Time-Min | Write Protection | Alternate Memory Width | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Sector Size | Ready/Busy | Boot Block | Common Flash Interface | Length | Width |
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![]() | Mfr. Part #EN25S40A-104XFIP2SElecinsight Part #799-630-EN25S40A-104XFIP2S | Elite Semiconductor Memory Technology Inc |
Flash,
Datasheet
Compare
| Min.:1 Mult.:1 | YES | 8 | - | 104 MHz | - | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | - | 524288 words | 512000 | 85 °C | -40 °C | PLASTIC/EPOXY | HVSON | USON-8 | SOLCC8,.12,20 | RECTANGULAR | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE | Contact Manufacturer | Yes | 1.8 V | - | EAR99 | NOR TYPE | - | - | 8542.32.00.51 | DUAL | NO LEAD | NOT SPECIFIED | 1 | 0.5 mm | unknown | NOT SPECIFIED | R-PDSO-N8 | - | 1.95 V | INDUSTRIAL | 1.65 V | SYNCHRONOUS | 0.018 mA | 512KX8 | 3-STATE | 0.5 mm | 8 | 0.00001 A | 4194304 bit | SERIAL | FLASH | 1.8 V | QSPI | 100000 Write/Erase Cycles | - | 20 | HARDWARE/SOFTWARE | - | - | - | - | - | - | - | - | - | 3 mm | 2 mm | ||
| EN25S40A-104XFIP2S 799-630-EN25S40A-104XFIP2S Elite Semiconductor Memory Technology Inc
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![]() | Mfr. Part #EN25F10A-104WIPElecinsight Part #799-630-EN25F10A-104WIP | Elite Semiconductor Memory Technology Inc |
Description: Flash, 128KX8, PDSO8, 5 X 6 MM, HALOGEN FREE, ROHS AND REACH COMPLIANT, VDFN-8
Datasheet
Compare
| Min.:1 Mult.:1 | YES | 8 | - | 104 MHz | - | ELITE SEMICONDUCTOR MICROELECTRONICS TECHNOLOGYINC | - | 131072 words | 128000 | 85 °C | -40 °C | PLASTIC/EPOXY | HVSON | HVSON, SOLCC8,.25 | SOLCC8,.25 | RECTANGULAR | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE | Contact Manufacturer | Yes | 3 V | - | EAR99 | NOR TYPE | - | - | 8542.32.00.51 | DUAL | NO LEAD | NOT SPECIFIED | 1 | 1.27 mm | unknown | NOT SPECIFIED | R-PDSO-N8 | - | 3.6 V | INDUSTRIAL | 2.7 V | SYNCHRONOUS | 0.028 mA | 128KX8 | 3-STATE | 0.8 mm | 8 | 0.00002 A | 1048576 bit | SERIAL | FLASH | 2.7 V | SPI | 100000 Write/Erase Cycles | - | 20 | HARDWARE/SOFTWARE | 1 | - | - | - | - | - | - | - | - | 6 mm | 5 mm | ||
| EN25F10A-104WIP 799-630-EN25F10A-104WIP Elite Semiconductor Memory Technology Inc
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![]() | Mfr. Part #F59L1G81LB-25BG2MElecinsight Part #799-630-F59L1G81LB-25BG2M | Elite Semiconductor Memory Technology Inc |
Description: Flash Memory,
Datasheet
Compare
| Min.:1 Mult.:1 | - | - | - | - | 2017-08-31 | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | - | - | - | - | - | - | - | , | - | - | - | Active | - | - | - | EAR99 | - | - | - | 8542.32.00.51 | - | - | NOT SPECIFIED | - | - | unknown | NOT SPECIFIED | - | - | - | - | - | - | - | - | - | - | - | - | - | - | FLASH | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| F59L1G81LB-25BG2M 799-630-F59L1G81LB-25BG2M Elite Semiconductor Memory Technology Inc
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![]() | Mfr. Part #EN25QH32B-104WIP2BElecinsight Part #799-630-EN25QH32B-104WIP2B | Elite Semiconductor Memory Technology Inc |
Flash, 4MX8, PDSO8, VDFN-8
Datasheet
Compare
| Min.:1 Mult.:1 | YES | 8 | - | 104 MHz | 2017-08-07 | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | - | 4194304 words | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | HVSON | HVSON, | SOLCC8,.25 | RECTANGULAR | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE | Contact Manufacturer | Yes | 3 V | - | EAR99 | NOR TYPE | - | - | 8542.32.00.51 | DUAL | NO LEAD | NOT SPECIFIED | 1 | 1.27 mm | unknown | NOT SPECIFIED | R-PDSO-N8 | - | 3.6 V | INDUSTRIAL | 2.7 V | SYNCHRONOUS | 0.02 mA | 4MX8 | 3-STATE | 0.8 mm | 8 | 0.00002 A | 33554432 bit | SERIAL | FLASH | 3 V | SPI | 100000 Write/Erase Cycles | - | 20 | HARDWARE/SOFTWARE | 1 | - | - | - | - | - | - | - | - | 6 mm | 5 mm | ||
| EN25QH32B-104WIP2B 799-630-EN25QH32B-104WIP2B Elite Semiconductor Memory Technology Inc
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![]() | Mfr. Part #EN25F20A-104RBIPElecinsight Part #799-630-EN25F20A-104RBIP | Elite Semiconductor Memory Technology Inc |
Flash, 256KX8, PDSO8, VSOP-8
Datasheet
Compare
| Min.:1 Mult.:1 | YES | 8 | - | 104 MHz | - | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | - | 262144 words | 256000 | 85 °C | -40 °C | PLASTIC/EPOXY | VSOP | VSOP-8 | - | RECTANGULAR | SMALL OUTLINE, VERY THIN PROFILE | Active | - | 3 V | - | EAR99 | NOR TYPE | - | - | 8542.32.00.51 | DUAL | GULL WING | - | 1 | 1.27 mm | unknown | - | R-PDSO-G8 | - | 3.6 V | INDUSTRIAL | 2.7 V | SYNCHRONOUS | - | 256KX8 | - | 0.9 mm | 8 | - | 2097152 bit | SERIAL | FLASH | 2.7 V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 4.9 mm | 3.9 mm | ||
| EN25F20A-104RBIP 799-630-EN25F20A-104RBIP Elite Semiconductor Memory Technology Inc
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![]() | Mfr. Part #ES29LV320DB-90TGIElecinsight Part #799-630-ES29LV320DB-90TGI | Excel (Suzhou) Semiconductor Co Ltd |
Description: Flash, 2MX16, 90ns, PDSO48
Datasheet
Compare
| Min.:1 Mult.:1 | YES | 48 | 90 ns | - | - | EXCEL SEMICONDUCTOR INC | 3 | 2097152 words | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSSOP | TSSOP, TSSOP48,.8,20 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Obsolete | Yes | - | - | EAR99 | NOR TYPE | - | - | 8542.32.00.51 | DUAL | GULL WING | 260 | - | 0.5 mm | unknown | - | R-PDSO-G48 | Not Qualified | - | INDUSTRIAL | - | - | 0.03 mA | 2MX16 | - | - | 16 | 0.00001 A | 33554432 bit | PARALLEL | FLASH | - | - | - | - | - | - | 8 | YES | YES | YES | 8,63 | 8K,64K | YES | BOTTOM | YES | - | - | ||
| ES29LV320DB-90TGI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #EN25S20A-104WIP2SFElecinsight Part #799-630-EN25S20A-104WIP2SF | Elite Semiconductor Memory Technology Inc |
Flash,
Datasheet
Compare
| Min.:1 Mult.:1 | YES | 8 | - | 104 MHz | - | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | - | 262144 words | 256000 | 85 °C | -40 °C | PLASTIC/EPOXY | HVSON | VDFN-8 | SOLCC8,.25 | RECTANGULAR | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE | Contact Manufacturer | Yes | 1.8 V | - | EAR99 | NOR TYPE | - | - | 8542.32.00.51 | DUAL | NO LEAD | NOT SPECIFIED | 1 | 1.27 mm | unknown | NOT SPECIFIED | R-PDSO-N8 | - | 1.95 V | INDUSTRIAL | 1.65 V | SYNCHRONOUS | 0.02 mA | 256KX8 | 3-STATE | 0.8 mm | 8 | 0.00001 A | 2097152 bit | SERIAL | FLASH | 1.8 V | SPI | 100000 Write/Erase Cycles | - | 20 | HARDWARE/SOFTWARE | 1 | - | - | - | - | - | - | - | - | 6 mm | 5 mm | ||
| EN25S20A-104WIP2SF 799-630-EN25S20A-104WIP2SF Elite Semiconductor Memory Technology Inc
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![]() | Mfr. Part #EN29SL800B-90MIPElecinsight Part #799-630-EN29SL800B-90MIP | Elite Semiconductor Memory Technology Inc |
Description: Flash, 512KX16, 90ns, PBGA48, WFBGA-48
Datasheet
Compare
| Min.:1 Mult.:1 | YES | 48 | 90 ns | - | - | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | - | 524288 words | 512000 | 85 °C | -40 °C | PLASTIC/EPOXY | VFBGA | VFBGA, BGA48,6X11,20 | BGA48,6X11,20 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | Contact Manufacturer | Yes | 1.8 V | - | EAR99 | NOR TYPE | - | - | 8542.32.00.51 | BOTTOM | BALL | - | 1 | 0.5 mm | unknown | - | R-PBGA-B48 | Not Qualified | 2.2 V | INDUSTRIAL | 1.65 V | ASYNCHRONOUS | 0.03 mA | 512KX16 | - | 0.73 mm | 16 | 0.000005 A | 8388608 bit | PARALLEL | FLASH | 1.8 V | - | 100000 Write/Erase Cycles | - | - | - | 8 | YES | YES | YES | 1,2,1,15 | 16K,8K,32K,64K | YES | BOTTOM | - | 6 mm | 5 mm | ||
| EN29SL800B-90MIP 799-630-EN29SL800B-90MIP Elite Semiconductor Memory Technology Inc
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![]() | Mfr. Part #EN25S64A-104HIPElecinsight Part #799-630-EN25S64A-104HIP | Elite Semiconductor Memory Technology Inc |
Flash,
Datasheet
Compare
| Min.:1 Mult.:1 | YES | 8 | - | 104 MHz | - | ELITE SEMICONDUCTOR MICROELECTRONICS TECHNOLOGYINC | - | 8388608 words | 8000000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP-8 | SOP8,.3 | SQUARE | SMALL OUTLINE | Active | Yes | 1.8 V | - | EAR99 | NOR TYPE | - | - | 8542.32.00.51 | DUAL | GULL WING | NOT SPECIFIED | 1 | 1.27 mm | unknown | NOT SPECIFIED | S-PDSO-G8 | - | 1.95 V | INDUSTRIAL | 1.65 V | SYNCHRONOUS | 0.03 mA | 8MX8 | 3-STATE | 2.2 mm | 8 | 0.000035 A | 67108864 bit | SERIAL | FLASH | 1.8 V | SPI | 100000 Write/Erase Cycles | - | 20 | HARDWARE/SOFTWARE | 1 | - | - | - | - | - | - | - | - | 5.275 mm | 5.275 mm | ||
| EN25S64A-104HIP 799-630-EN25S64A-104HIP Elite Semiconductor Memory Technology Inc
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![]() | Mfr. Part #EN25S80B-104WIP2SElecinsight Part #799-630-EN25S80B-104WIP2S | Elite Semiconductor Memory Technology Inc |
Flash, 1MX8, PDSO8, VDFN-8
Datasheet
Compare
| Min.:1 Mult.:1 | YES | 8 | - | 104 MHz | 2017-07-31 | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | - | 1048576 words | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | HVSON | VDFN-8 | SOLCC8,.25 | RECTANGULAR | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE | Contact Manufacturer | - | 1.8 V | - | EAR99 | NOR TYPE | - | - | 8542.32.00.51 | DUAL | NO LEAD | NOT SPECIFIED | 1 | 1.27 mm | unknown | NOT SPECIFIED | R-PDSO-N8 | - | 1.95 V | INDUSTRIAL | 1.65 V | SYNCHRONOUS | 0.0095 mA | 1MX8 | 3-STATE | 0.8 mm | 8 | 0.00001 A | 8388608 bit | SERIAL | FLASH | 1.8 V | QSPI | 100000 Write/Erase Cycles | - | 20 | HARDWARE/SOFTWARE | - | - | - | - | - | - | - | - | - | 6 mm | 5 mm | ||
| EN25S80B-104WIP2S 799-630-EN25S80B-104WIP2S Elite Semiconductor Memory Technology Inc
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![]() | Mfr. Part #EN29LV160CT-70BIPElecinsight Part #799-630-EN29LV160CT-70BIP | Elite Semiconductor Memory Technology Inc |
Flash, 1MX16, 70ns, PBGA48, TFBGA-48
Datasheet
Compare
| Min.:1 Mult.:1 | YES | 48 | 70 ns | - | - | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | - | 1048576 words | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LFBGA | LFBGA, | BGA48,6X8,32 | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | Active | - | 3 V | - | EAR99 | NOR TYPE | - | TOP BOOT SECTOR | 8542.32.00.51 | BOTTOM | BALL | - | 1 | 0.8 mm | unknown | - | R-PBGA-B48 | - | 3.6 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.016 mA | 1MX16 | - | 1.3 mm | 16 | 0.000005 A | 16777216 bit | PARALLEL | FLASH | 3 V | - | 100000 Write/Erase Cycles | 0.00007 ms | 20 | - | 8 | YES | YES | YES | 1,2,1,31 | 16K,8K,32K,64K | YES | TOP | YES | 8 mm | 6 mm | ||
| EN29LV160CT-70BIP 799-630-EN29LV160CT-70BIP Elite Semiconductor Memory Technology Inc
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![]() | Mfr. Part #EN39SL160AH-70BIPElecinsight Part #799-630-EN39SL160AH-70BIP | Elite Semiconductor Memory Technology Inc |
Flash, 1MX16, 70ns, PBGA48, TFBGA-48
Datasheet
Compare
| Min.:1 Mult.:1 | YES | 48 | 70 ns | - | - | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | - | 1048576 words | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | VFBGA | TFBGA-48 | - | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | Contact Manufacturer | - | 1.8 V | - | EAR99 | NOR TYPE | - | HIGHEST ADDRESS SECTOR PROTECTED | 8542.32.00.51 | BOTTOM | BALL | - | 1 | 0.5 mm | unknown | - | R-PBGA-B48 | - | 1.95 V | INDUSTRIAL | 1.65 V | ASYNCHRONOUS | - | 1MX16 | - | 0.73 mm | 16 | - | 16777216 bit | PARALLEL | FLASH | 1.8 V | - | - | - | - | - | 8 | - | - | - | - | - | - | BOTTOM/TOP | - | 6 mm | 4 mm | ||
| EN39SL160AH-70BIP 799-630-EN39SL160AH-70BIP Elite Semiconductor Memory Technology Inc
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![]() | Mfr. Part #EN29F002ANT-70PCPElecinsight Part #799-630-EN29F002ANT-70PCP | Elite Semiconductor Memory Technology Inc |
Flash Memory,
Datasheet
Compare
| Min.:1 Mult.:1 | - | - | - | - | - | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | - | - | - | - | - | - | - | , | - | - | - | Contact Manufacturer | - | - | - | EAR99 | - | - | - | 8542.32.00.51 | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| EN29F002ANT-70PCP 799-630-EN29F002ANT-70PCP Elite Semiconductor Memory Technology Inc
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![]() | Mfr. Part #EN25F10A-104RBIPElecinsight Part #799-630-EN25F10A-104RBIP | Elite Semiconductor Memory Technology Inc |
Flash, 128KX8, PDSO8, 0.150 INCH, HALOGEN FREE, ROHS AND REACH COMPLIANT, VSOP-8
Datasheet
Compare
| Min.:1 Mult.:1 | YES | 8 | - | 104 MHz | - | ELITE SEMICONDUCTOR MICROELECTRONICS TECHNOLOGYINC | - | 131072 words | 128000 | 85 °C | -40 °C | PLASTIC/EPOXY | VSOP | VSOP, SOP8,.25 | SOP8,.25 | RECTANGULAR | SMALL OUTLINE, VERY THIN PROFILE | Contact Manufacturer | Yes | 3 V | - | EAR99 | NOR TYPE | - | - | 8542.32.00.51 | DUAL | GULL WING | NOT SPECIFIED | 1 | 1.27 mm | unknown | NOT SPECIFIED | R-PDSO-G8 | - | 3.6 V | INDUSTRIAL | 2.7 V | SYNCHRONOUS | 0.028 mA | 128KX8 | 3-STATE | 0.9 mm | 8 | 0.00002 A | 1048576 bit | SERIAL | FLASH | 2.7 V | SPI | 100000 Write/Erase Cycles | - | 20 | HARDWARE/SOFTWARE | 1 | - | - | - | - | - | - | - | - | 4.9 mm | 3.9 mm | ||
| EN25F10A-104RBIP 799-630-EN25F10A-104RBIP Elite Semiconductor Memory Technology Inc
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![]() | Mfr. Part #EN29GL064H-70ZIPElecinsight Part #799-630-EN29GL064H-70ZIP | Elite Semiconductor Memory Technology Inc |
Flash, 4MX16, 70ns, PDSO56, TSOP-56
Datasheet
Compare
| Min.:1 Mult.:1 | YES | 56 | 70 ns | - | - | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | - | 4194304 words | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSSOP | TSSOP, | - | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Obsolete | - | 3 V | - | EAR99 | - | - | HIGHEST ADDRESS SECTOR PROTECTED | 8542.32.00.51 | DUAL | GULL WING | - | 1 | 0.5 mm | unknown | - | R-PDSO-G56 | - | 3.6 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | - | 4MX16 | - | 1.2 mm | 16 | - | 67108864 bit | PARALLEL | FLASH | 3 V | - | - | - | - | - | 8 | - | - | - | - | - | - | - | - | 18.4 mm | 14 mm | ||
| EN29GL064H-70ZIP 799-630-EN29GL064H-70ZIP Elite Semiconductor Memory Technology Inc
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![]() | Mfr. Part #EN25QA64A-104BBIPElecinsight Part #799-630-EN25QA64A-104BBIP | Elite Semiconductor Memory Technology Inc |
Flash, 8MX8, PBGA24, TFBGA-24
Datasheet
Compare
| Min.:1 Mult.:1 | YES | 24 | - | 104 MHz | - | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | - | 8388608 words | 8000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TBGA | TBGA, | BGA24,4X6,40 | RECTANGULAR | GRID ARRAY, THIN PROFILE | Active | Yes | 3 V | - | EAR99 | NOR TYPE | - | - | 8542.32.00.51 | BOTTOM | BALL | NOT SPECIFIED | 1 | 1 mm | unknown | NOT SPECIFIED | R-PBGA-B24 | - | 3.6 V | INDUSTRIAL | 2.7 V | SYNCHRONOUS | 0.035 mA | 8MX8 | 3-STATE | 1.2 mm | 8 | 0.00002 A | 67108864 bit | SERIAL | FLASH | 3 V | SPI | 100000 Write/Erase Cycles | - | 20 | SOFTWARE | 1 | - | - | - | - | - | - | - | - | 8 mm | 6 mm | ||
| EN25QA64A-104BBIP 799-630-EN25QA64A-104BBIP Elite Semiconductor Memory Technology Inc
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![]() | Mfr. Part #EN29LV160DB-70BIP2WElecinsight Part #799-630-EN29LV160DB-70BIP2W | Elite Semiconductor Memory Technology Inc |
Flash,
Datasheet
Compare
| Min.:1 Mult.:1 | - | - | - | - | - | ELITE SEMICONDUCTOR MICROELECTRONICS TECHNOLOGYINC | - | - | - | - | - | - | - | - | - | - | - | Active | Yes | - | - | - | - | - | - | - | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | FLASH | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| EN29LV160DB-70BIP2W 799-630-EN29LV160DB-70BIP2W Elite Semiconductor Memory Technology Inc
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![]() | Mfr. Part #ES29LV160DB-90TCElecinsight Part #799-630-ES29LV160DB-90TC | Excel (Suzhou) Semiconductor Co Ltd |
Flash, 1MX16, 90ns, PDSO48
Datasheet
Compare
| Min.:1 Mult.:1 | YES | 48 | 90 ns | - | - | EXCEL SEMICONDUCTOR INC | 3 | 1048576 words | 1000000 | 70 °C | - | PLASTIC/EPOXY | TSSOP | TSSOP, TSSOP48,.8,20 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Obsolete | No | - | e0 | EAR99 | NOR TYPE | TIN LEAD | - | 8542.32.00.51 | DUAL | GULL WING | 240 | - | 0.5 mm | unknown | - | R-PDSO-G48 | Not Qualified | - | COMMERCIAL | - | - | 0.03 mA | 1MX16 | - | - | 16 | 0.00001 A | 16777216 bit | PARALLEL | FLASH | - | - | - | - | - | - | 8 | YES | YES | YES | 1,2,1,31 | 16K,8K,32K,64K | YES | BOTTOM | YES | - | - | ||
| ES29LV160DB-90TC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #EN29LV320CB-70TIP2YElecinsight Part #799-630-EN29LV320CB-70TIP2Y | Elite Semiconductor Memory Technology Inc |
Description: Flash,
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| Min.:1 Mult.:1 | YES | 48 | 70 ns | - | - | ELITE SEMICONDUCTOR MICROELECTRONICS TECHNOLOGYINC | - | 2097152 words | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP1 | - | TSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Active | Yes | 3 V | - | - | NOR TYPE | - | - | - | DUAL | GULL WING | - | 1 | 0.5 mm | unknown | - | R-PDSO-G48 | - | 3.6 V | - | 2.7 V | ASYNCHRONOUS | 0.016 mA | 2MX16 | - | 1.2 mm | 16 | 0.000005 A | 33554432 bit | PARALLEL | FLASH | 3 V | - | - | 70 ms | 10 | - | 8 | YES | YES | YES | 8,63 | 8K,64K | YES | BOTTOM | YES | 18.4 mm | 12 mm | ||
| EN29LV320CB-70TIP2Y 799-630-EN29LV320CB-70TIP2Y Elite Semiconductor Memory Technology Inc
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![]() | Mfr. Part #EN25S32A-104RIP2SElecinsight Part #799-630-EN25S32A-104RIP2S | Elite Semiconductor Memory Technology Inc |
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| Min.:1 Mult.:1 | YES | 8 | - | 104 MHz | - | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | - | 4194304 words | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | VSOP | VSOP-8 | SOP8,.25 | SQUARE | SMALL OUTLINE, VERY THIN PROFILE | Contact Manufacturer | Yes | 1.8 V | - | EAR99 | NOR TYPE | - | - | 8542.32.00.51 | DUAL | GULL WING | NOT SPECIFIED | 1 | 1.27 mm | unknown | NOT SPECIFIED | S-PDSO-G8 | - | 1.95 V | INDUSTRIAL | 1.65 V | SYNCHRONOUS | 0.03 mA | 4MX8 | 3-STATE | 1 mm | 8 | 0.00001 A | 33554432 bit | SERIAL | FLASH | 1.8 V | SPI | 100000 Write/Erase Cycles | - | 20 | HARDWARE/SOFTWARE | 1 | - | - | - | - | - | - | - | - | 5.28 mm | 5.28 mm | ||
| EN25S32A-104RIP2S 799-630-EN25S32A-104RIP2S Elite Semiconductor Memory Technology Inc
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In Stock :
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