Advanced Power Electronics Corp AP05N50H Specialized Transistors
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AP05N50H Tech Specifications
| Category | Transistors - Special Purpose | |
| Manufacturer | ADVANCED POWER TECHNOLOGY | |
| Surface Mount | YES | |
| Number of Terminals | 2Terminals | |
| Transistor Element Material | SILICON | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ADVANCED POWER ELECTRONICS CORP | |
| Part Package Code | TO-252 | |
| Package Description | ROHS COMPLIANT PACKAGE-3 | |
| Drain Current-Max (ID) | 5 A | |
| Number of Elements | 1 Element | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| ECCN Code | EAR99 |
| Terminal Position | SINGLE | |
| Terminal Form | GULL WING | |
| Reach Compliance Code | compliant | |
| Pin Count | 4 | |
| JESD-30 Code | R-PSSO-G2 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | N-CHANNEL | |
| JEDEC-95 Code | TO-252 | |
| Drain-source On Resistance-Max | 1.4 Ω | |
| Pulsed Drain Current-Max (IDM) | 18 A | |
| DS Breakdown Voltage-Min | 500 V | |
| Avalanche Energy Rating (Eas) | 45 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
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AP05N50H Documents
Download datasheets and manufacturer documentation for AP05N50H
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