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JANTXV2N6301 Tech Specifications

Category Transistors - Bipolar (BJT) - Single
Manufacturer Aeroflex
Mount Through Hole
ECCN (US) EAR99
HTS 8541.29.00.95
Automotive Unknown
PPAP Unknown
Number of Elements per Chip 1
Maximum Collector-Emitter Voltage (V) 80
Maximum Collector Base Voltage (V) 80
Maximum Emitter Base Voltage (V) 5
Maximum Base Emitter Saturation Voltage (V) 4@80mA@8A
Maximum Continuous DC Collector Current (A) 8
Maximum Collector-Emitter Saturation Voltage (V) 2@16mA@4A|3@80mA@8A
Minimum DC Current Gain 500@1A@3V|750@4A@3V|100@8A@3V
Maximum Power Dissipation (mW) 75000
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 200
Supplier Temperature Grade Military
Mounting Through Hole
Package Height 8.64(Max)
Package Width 17.78
Package Length 24.43(Max) + 7.36
PCB changed 2
Tab Tab
Standard Package Name TO-213-AA
Supplier Package TO-66
Lead Shape Through Hole
Emitter-Base Voltage 5(V)
Base-Emitter Saturation Voltage (Max) 4(V)
Operating Temperature Classification Military
Package Type TO-66
Collector-Base Voltage 80(V)
Collector-Emitter Saturation Voltage 2(V)
Operating Temp Range -55C to 200C
Collector Current (DC) 8(A)
Number of Elements 1 Element
Rad Hardened No
Collector-Emitter Voltage 80(V)
DC Current Gain 500
RoHS Non-Compliant
Packaging Bulk
Part Status Active
Type NPN
Pin Count 3
Polarity NPN
Configuration Single
Element Configuration Single
Power Dissipation 75(W)
Collector Emitter Voltage (VCEO) 80 V
Collector Base Voltage (VCBO) 80 V
Radiation Hardening No
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