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GKI04101 Tech Specifications

Category Transistors - FETs, MOSFETs - Arrays
Manufacturer Allegro
EU RoHS Compliant with Exemption
ECCN (US) EAR99
HTS 8541.29.00.95
Category Power MOSFET
Process Technology TMOS
Channel Mode Enhancement
Number of Elements per Chip 1
Maximum Drain Source Voltage (V) 40
Maximum Gate Source Voltage (V) ±20
Maximum Gate Threshold Voltage (V) 2.5
Maximum Continuous Drain Current (A) 9
Maximum Gate Source Leakage Current (nA) 100
Maximum IDSS (uA) 100
Maximum Drain Source Resistance (MOhm) 11.6@10V
Typical Gate Charge @ Vgs (nC) 5.1@4.5V|13.3@10V
Typical Gate Charge @ 10V (nC) 13.3
Typical Input Capacitance @ Vds (pF) 990@25V
Maximum Power Dissipation (mW) 3100
Typical Fall Time (ns) 4.7
Typical Rise Time (ns) 2.2
Typical Turn-Off Delay Time (ns) 9.6
Typical Turn-On Delay Time (ns) 1.6
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
Part Status Active
Configuration Single Quad Drain Triple Source
Channel Type N
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