SKI04024 Tech Specifications

Category Transistors - FETs, MOSFETs - Arrays
Manufacturer Allegro
EU RoHS Compliant with Exemption
ECCN (US) EAR99
Category Power MOSFET
Process Technology TMOS
Channel Mode Enhancement
Number of Elements per Chip 1
Maximum Drain Source Voltage (V) 40
Maximum Gate Source Voltage (V) ±20
Maximum Gate Threshold Voltage (V) 2.5
Maximum Continuous Drain Current (A) 85
Maximum Gate Source Leakage Current (nA) 100
Maximum IDSS (uA) 100
Typical Gate Charge @ Vgs (nC) 93.7@10V|44.9@4.5V
Typical Gate Charge @ 10V (nC) 93.7
Typical Input Capacitance @ Vds (pF) 6200@25V
Maximum Power Dissipation (mW) 135000
Typical Fall Time (ns) 28
Typical Rise Time (ns) 13.2
Typical Turn-Off Delay Time (ns) 45.5
Typical Turn-On Delay Time (ns) 9.7
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
Part Status Obsolete
Configuration Single Dual Drain
Channel Type N
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