American Microsemiconductor, Inc. JANTX2N3501 Single BJT Transistors
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JANTX2N3501 Tech Specifications
| Category | Transistors - Bipolar (BJT) - Single | |
| Manufacturer | American Microsemiconductor | |
| Lifecycle Status | IN PRODUCTION (Last Updated: 3 weeks ago) | |
| Factory Lead Time | 23 Weeks | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-205AD, TO-39-3 Metal Can | |
| Number of Pins | 3Pins | |
| Supplier Device Package | TO-39 (TO-205AD) | |
| Collector-Emitter Breakdown Voltage | 150V | |
| Current-Collector (Ic) (Max) | 300mA | |
| Number of Elements | 1 Element | |
| Operating Temperature | -65°C~200°C TA | |
| Packaging | Bulk | |
| Series | Military, MIL-PRF-19500/366 | |
| Published | 2002 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 200°C | |
| Min Operating Temperature | -55°C | |
| Max Power Dissipation | 1W | |
| Polarity | NPN | |
| Power Dissipation | 1W | |
| Power - Max | 1W | |
| Transistor Type | NPN | |
| Collector Emitter Voltage (VCEO) | 150V | |
| Max Collector Current | 300mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA 10V | |
| Current - Collector Cutoff (Max) | 10μA ICBO | |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 15mA, 150mA | |
| Voltage - Collector Emitter Breakdown (Max) | 150V | |
| Collector Base Voltage (VCBO) | 150V | |
| Emitter Base Voltage (VEBO) | 6V | |
| Radiation Hardening | No | |
| RoHS Status | Non-RoHS Compliant | |
| Lead Free | Contains Lead |
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JANTX2N3501 Documents
Download datasheets and manufacturer documentation for JANTX2N3501
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