JANTX2N6287 Tech Specifications

Category Transistors - Bipolar (BJT) - Single
Manufacturer American Microsemiconductor
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Factory Lead Time 20 Weeks
Contact Plating Lead, Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-204AA, TO-3
Supplier Device Package TO-204AA (TO-3)
Collector-Emitter Breakdown Voltage 100V
Current-Collector (Ic) (Max) 20A
Number of Elements 1 Element
Operating Temperature -65°C~200°C TJ
Published 2002
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -65°C
Max Power Dissipation 175W
Polarity PNP
Element Configuration Single
Power - Max 175W
Transistor Type PNP - Darlington
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 20A
DC Current Gain (hFE) (Min) @ Ic, Vce 1500 @ 1A 3V
Current - Collector Cutoff (Max) 1mA
Vce Saturation (Max) @ Ib, Ic 3V @ 200mA, 20A
Voltage - Collector Emitter Breakdown (Max) 100V
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 7V
Radiation Hardening No
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
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