AMI Semiconductor FQI11P06TU Single MOSFETs Transistors
IN STOCK
Min. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please sendRFQ, we will respond immediately
FQI11P06TU Tech Specifications
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | AMI Semiconductor | |
| Mounting Type | Through Hole | |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA | |
| Supplier Device Package | I2PAK (TO-262) | |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant | |
| Current - Continuous Drain (Id) @ 25℃ | 11.4A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Power Dissipation (Max) | 3.13W (Ta), 53W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Series | QFET® |
| Packaging | Tube | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Technology | MOSFET (Metal Oxide) | |
| FET Type | P-Channel | |
| Rds On (Max) @ Id, Vgs | 175 mOhm @ 5.7A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250µA | |
| Input Capacitance (Ciss) (Max) @ Vds | 550pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 17nC @ 10V | |
| Drain to Source Voltage (Vdss) | 60V | |
| Vgs (Max) | ±25V | |
| FET Feature | - |
Select at least one checkbox above to show similar products in this category.
Index :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ