AMI Semiconductor FQPF9N25C Single MOSFETs Transistors
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FQPF9N25C Tech Specifications
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | AMI Semiconductor | |
| Lifecycle Status | Production (Last Updated: 2 years ago) | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 Full Pack | |
| Supplier Device Package | TO-220F | |
| RoHS | Compliant | |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant | |
| Current - Continuous Drain (Id) @ 25℃ | 8.8A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Power Dissipation (Max) | 38W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Series | QFET® | |
| Packaging | Tube | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Color | White | |
| Max Power Dissipation | 14.8 W | |
| Technology | MOSFET (Metal Oxide) | |
| Max Current Rating | 750 mA |
| Viewing Angle | 115 ° | |
| Lens Style | Flat | |
| FET Type | N-Channel | |
| Rds On (Max) @ Id, Vgs | 430 mOhm @ 4.4A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250µA | |
| Test Current | 400 mA | |
| Input Capacitance (Ciss) (Max) @ Vds | 710pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 35nC @ 10V | |
| Drain to Source Voltage (Vdss) | 250V | |
| Vgs (Max) | ±30V | |
| Forward Voltage | 18 V | |
| Luminous Flux | 700 lm | |
| FET Feature | - | |
| Color Rendering Index (CRI) | 80 | |
| Test Temperature | 85 °C | |
| Width | 15.85 mm | |
| Height | 1.7 mm | |
| Length | 15.85 mm |
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