AMI Semiconductor ISL9N303AP3 Single MOSFETs Transistors
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ISL9N303AP3 Tech Specifications
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | AMI Semiconductor | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 | |
| Supplier Device Package | TO-220AB | |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant | |
| Current - Continuous Drain (Id) @ 25℃ | 75A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Power Dissipation (Max) | 215W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Series | UltraFET™ |
| Packaging | Tube | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Technology | MOSFET (Metal Oxide) | |
| FET Type | N-Channel | |
| Rds On (Max) @ Id, Vgs | 3.2 mOhm @ 75A, 10V | |
| Vgs(th) (Max) @ Id | 3V @ 250µA | |
| Input Capacitance (Ciss) (Max) @ Vds | 7000pF @ 15V | |
| Gate Charge (Qg) (Max) @ Vgs | 172nC @ 10V | |
| Drain to Source Voltage (Vdss) | 30V | |
| Vgs (Max) | ±20V | |
| FET Feature | - |
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