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MMUN2112LT1G Tech Specifications

Category Transistors - Bipolar (BJT) - Single, Pre-Biased
Manufacturer AMI Semiconductor
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Current-Collector (Ic) (Max) 100mA
Other Names MMUN2112LT1G-ND MMUN2112LT1GOSTR
Series -
Packaging Tape & Reel (TR)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number MMUN21**L
Power - Max 246mW
Transistor Type PNP - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 5mA, 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 22 kOhms
Resistor - Emitter Base (R2) 22 kOhms
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