AMI Semiconductor NDD60N745U1T4G Single MOSFETs Transistors
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NDD60N745U1T4G Tech Specifications
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | AMI Semiconductor | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| Supplier Device Package | DPAK | |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant | |
| Current - Continuous Drain (Id) @ 25℃ | 6.6A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Power Dissipation (Max) | 84W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Series | - |
| Packaging | Tape & Reel (TR) | |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) | |
| Technology | MOSFET (Metal Oxide) | |
| FET Type | N-Channel | |
| Rds On (Max) @ Id, Vgs | 745 mOhm @ 3.25A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250µA | |
| Input Capacitance (Ciss) (Max) @ Vds | 440pF @ 50V | |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V | |
| Drain to Source Voltage (Vdss) | 600V | |
| Vgs (Max) | ±25V | |
| FET Feature | - |
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