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NSBC114TF3T5G Tech Specifications

Category Transistors - Bipolar (BJT) - Single, Pre-Biased
Manufacturer AMI Semiconductor
Mounting Type Surface Mount
Package / Case SOT-1123
Supplier Device Package SOT-1123
RoHS Compliant
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Current-Collector (Ic) (Max) 100mA
Packaging Cut Tape (CT)
Series -
Tolerance 1 %
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
Resistance 44.2 kΩ
Power Rating 100 mW
Base Part Number NSBC1*
Power - Max 254mW
Transistor Type NPN - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 5mA, 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 10 kOhms
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