AMI Semiconductor NTMD6N02R2G MOSFETs Transistors Arrays
20V 730mW
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NTMD6N02R2G Tech Specifications
| Category | Transistors - FETs, MOSFETs - Arrays | |
| Manufacturer | AMI Semiconductor | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) | |
| Supplier Device Package | 8-SOIC | |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant | |
| Current - Continuous Drain (Id) @ 25℃ | 3.92A | |
| Other Names | NTMD6N02R2GOS NTMD6N02R2GOS-ND NTMD6N02R2GOSTR | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Series | - | |
| Packaging | Tape & Reel (TR) |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Base Part Number | NTMD6N02 | |
| Power - Max | 730mW | |
| FET Type | 2 N-Channel (Dual) | |
| Rds On (Max) @ Id, Vgs | 35 mOhm @ 6A, 4.5V | |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA | |
| Input Capacitance (Ciss) (Max) @ Vds | 1100pF @ 16V | |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 4.5V | |
| Drain to Source Voltage (Vdss) | 20V | |
| FET Feature | Logic Level Gate |
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