AMI Semiconductor NVMFD5C478NT1G MOSFETs Transistors Arrays
3.1W (Ta), 23W (Tc) 40V
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NVMFD5C478NT1G Tech Specifications
| Category | Transistors - FETs, MOSFETs - Arrays | |
| Manufacturer | AMI Semiconductor | |
| Mount | Wall | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-PowerTDFN | |
| Supplier Device Package | 8-DFN (5x6) Dual Flag (SO8FL-Dual) | |
| RoHS | Compliant | |
| Lead Free Status | Lead free | |
| Current - Continuous Drain (Id) @ 25℃ | 9.8A (Ta), 27A (Tc) | |
| Other Names | NVMFD5C478NT1GOSDKR | |
| Packaging | Bulk | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Series | - | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Termination | Crimp | |
| Gender | Female | |
| Orientation | Straight | |
| Number of Contacts | 3Contacts | |
| Power - Max | 3.1W (Ta), 23W (Tc) | |
| FET Type | 2 N-Channel (Dual) | |
| Rds On (Max) @ Id, Vgs | 17 mOhm @ 7.5A, 10V | |
| Vgs(th) (Max) @ Id | 3.5V @ 20µA | |
| Input Capacitance (Ciss) (Max) @ Vds | 325pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 6.3nC @ 10V | |
| Drain to Source Voltage (Vdss) | 40V | |
| FET Feature | Standard | |
| Radiation Hardening | No |
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