Ampleon USA Inc. BLF6G38-100,112 RF MOSFETs Transistors
18.5W 13dB 3.4GHz~3.6GHz
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BLF6G38-100,112 Tech Specifications
| Category | Transistors - FETs, MOSFETs - RF | |
| Manufacturer | Ampleon | |
| Package / Case | SOT-502A | |
| Surface Mount | YES | |
| Transistor Element Material | SILICON | |
| Number of Elements | 1 Element | |
| Voltage Rated | 65V | |
| Packaging | Tray | |
| Published | 2010 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 2Terminations | |
| ECCN Code | EAR99 | |
| Current Rating (Amps) | 34A | |
| Terminal Position | DUAL | |
| Terminal Form | FLAT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | unknown | |
| Frequency | 3.4GHz~3.6GHz |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Base Part Number | BLF6G38 | |
| Reference Standard | IEC-60134 | |
| JESD-30 Code | R-CDFM-F2 | |
| Configuration | SINGLE | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | SOURCE | |
| Current - Test | 1.05A | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | N-CHANNEL | |
| Transistor Type | LDMOS | |
| Gain | 13dB | |
| Drain Current-Max (Abs) (ID) | 34A | |
| DS Breakdown Voltage-Min | 65V | |
| Power - Output | 18.5W | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Voltage - Test | 28V | |
| RoHS Status | Non-RoHS Compliant |
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BLF6G38-100,112 Documents
Download datasheets and manufacturer documentation for BLF6G38-100,112
- DatasheetsBLF6G38(LS)-100
- PCN Obsolescence/ EOLEOL 24/Jun/2016
- PCN Assembly/OriginRF Power Transistors Transfer 21/Dec/2013
- PCN PackagingDate Code Extended 18/Jul/2013
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