Ampleon USA Inc. BLF8G20LS-220U RF MOSFETs Transistors
1.81GHz~1.88GHz 18.9dB 55W
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BLF8G20LS-220U Tech Specifications
| Category | Transistors - FETs, MOSFETs - RF | |
| Manufacturer | Ampleon | |
| Factory Lead Time | 13 Weeks | |
| Package / Case | SOT-502B | |
| Surface Mount | YES | |
| Transistor Element Material | SILICON | |
| Number of Elements | 1 Element | |
| Voltage Rated | 65V | |
| Packaging | Tray | |
| Published | 2010 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 2Terminations | |
| ECCN Code | EAR99 | |
| Terminal Position | DUAL | |
| Terminal Form | FLAT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | unknown |
| Frequency | 1.81GHz~1.88GHz | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Base Part Number | BLF8G20 | |
| Reference Standard | IEC-60134 | |
| JESD-30 Code | R-CDFP-F2 | |
| Configuration | SINGLE | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | SOURCE | |
| Current - Test | 1.6A | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | N-CHANNEL | |
| Transistor Type | LDMOS | |
| Gain | 18.9dB | |
| DS Breakdown Voltage-Min | 65V | |
| Power - Output | 55W | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Voltage - Test | 28V | |
| RoHS Status | ROHS3 Compliant |
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BLF8G20LS-220U Documents
Download datasheets and manufacturer documentation for BLF8G20LS-220U
- DatasheetsBLF8G20LS-220
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