Ampleon USA Inc. BLP8G10S-45PGY RF MOSFETs Transistors
952.5MHz~957.5MHz 20.8dB 2.5W
IN STOCK
: 182
Min. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please sendRFQ, we will respond immediately
BLP8G10S-45PGY Tech Specifications
| Category | Transistors - FETs, MOSFETs - RF | |
| Manufacturer | Ampleon | |
| Factory Lead Time | 13 Weeks | |
| Package / Case | 4-BESOP (0.173, 4.40mm Width) | |
| Surface Mount | YES | |
| Transistor Element Material | SILICON | |
| Number of Elements | 2 Elements | |
| Voltage Rated | 65V | |
| Packaging | Tape & Reel (TR) | |
| Published | 2006 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) | |
| Number of Terminations | 4Terminations | |
| ECCN Code | EAR99 | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | unknown |
| Frequency | 952.5MHz~957.5MHz | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Base Part Number | BLP8G10 | |
| Reference Standard | IEC-60134 | |
| JESD-30 Code | R-PDSO-G4 | |
| Configuration | COMMON SOURCE, 2 ELEMENTS | |
| Operating Mode | ENHANCEMENT MODE | |
| Current - Test | 224mA | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | N-CHANNEL | |
| Transistor Type | LDMOS (Dual), Common Source | |
| Gain | 20.8dB | |
| DS Breakdown Voltage-Min | 65V | |
| Power - Output | 2.5W | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Voltage - Test | 28V | |
| RoHS Status | ROHS3 Compliant |
Select at least one checkbox above to show similar products in this category.
BLP8G10S-45PGY Documents
Download datasheets and manufacturer documentation for BLP8G10S-45PGY
- DatasheetsBLP8G10S-45P(G)
- PCN Design/SpecificationMult Dev Label/Marking Chg 23/Oct/2018 Metal Protrusions Position Chg 24/Nov/2015
Index :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ