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MAX2601ESA T Tech Specifications

Category Transistors - Bipolar (BJT) - RF
Manufacturer
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width) Exposed Pad
Supplier Device Package 8-SOIC-EP
Package Tape & Reel (TR)
Current-Collector (Ic) (Max) 1.2A
Base Product Number MAX2601
Mfr Analog Devices Inc./Maxim Integrated
Product Status Active
Emitter- Base Voltage VEBO 2.3 V
Transistor Polarity NPN
Maximum Operating Temperature + 85 C
DC Collector/Base Gain hfe Min 100
Minimum Operating Temperature - 40 C
Mounting Styles SMD/SMT
Collector- Emitter Voltage VCEO Max 17 V
Operating Temperature 150°C (TJ)
Series -
Technology Si
Operating Frequency 900 MHz
Configuration Single
Power - Max 6.4W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 250mA, 3V
Gain 11.6dB
Voltage - Collector Emitter Breakdown (Max) 15V
Frequency - Transition 1GHz
Continuous Collector Current 200 mA
Noise Figure (dB Typ @ f) 3.3dB @ 836MHz
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MAX2601ESA T Documents

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  • Datasheets
MAX2601ESA T brand manufacturers: Analog Devices, Elecinsight stock, MAX2601ESA T reference price.Analog Devices. MAX2601ESA T parameters, MAX2601ESA T Datasheet PDF and pin diagram description download.You can use the MAX2601ESA T Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find MAX2601ESA T pin diagram and circuit diagram and usage method of function,MAX2601ESA T electronics tutorials.You can download from the Elecinsight.