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SSM2212RZ-R7 Tech Specifications
Category | Transistors - Bipolar (BJT) - Arrays | |
Manufacturer | ||
Lifecycle Status | PRODUCTION (Last Updated: 4 weeks ago) | |
Factory Lead Time | 8 Weeks | |
Contact Plating | Tin | |
Mount | Surface Mount, Through Hole | |
Mounting Type | Surface Mount | |
Package / Case | 8-SOIC (0.154, 3.90mm Width) | |
Number of Pins | 8Pins | |
Transistor Element Material | SILICON | |
Collector-Emitter Breakdown Voltage | 45V | |
Number of Elements | 2 Elements | |
Operating Temperature | -65°C~150°C TJ | |
Packaging | Tape & Reel (TR) | |
JESD-609 Code | e3 | |
Pbfree Code | no | |
Part Status | Active | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Number of Terminations | 8Terminations | |
ECCN Code | EAR99 | |
Max Power Dissipation | 500mW |
Terminal Form | GULL WING | |
Peak Reflow Temperature (Cel) | 260 | |
Frequency | 200MHz | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Base Part Number | SSM2212 | |
Pin Count | 8 | |
Polarity | NPN | |
Element Configuration | Dual | |
Transistor Application | AMPLIFIER | |
Transistor Type | 2 NPN (Dual) Matched Pair | |
Collector Emitter Voltage (VCEO) | 40V | |
Max Collector Current | 20mA | |
Current - Collector Cutoff (Max) | 500pA | |
Vce Saturation (Max) @ Ib, Ic | 200mV @ 100μA, 1mA | |
Transition Frequency | 200MHz | |
Max Breakdown Voltage | 40V | |
Collector Base Voltage (VCBO) | 40V | |
DC Current Gain-Min (hFE) | 300 | |
Radiation Hardening | No | |
RoHS Status | ROHS3 Compliant | |
Lead Free | Contains Lead |
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SSM2212RZ-R7 Documents
Download datasheets and manufacturer documentation for SSM2212RZ-R7
- DatasheetsSSM2212
- ConflictMineralStatementAnalog-Devices-company-33.pdf
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