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- APT25GP120BDQ1G
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APT25GP120BDQ1G Tech Specifications
| Category | Transistors - IGBTs - Single | |
| Manufacturer | Atmel | |
| Package / Case | TO-247-3 | |
| RoHS | Details | |
| Mounting Styles | Through Hole | |
| Collector- Emitter Voltage VCEO Max | 1.2 kV | |
| Collector-Emitter Saturation Voltage | 3.3 V | |
| Maximum Gate Emitter Voltage | - 20 V, + 20 V | |
| Continuous Collector Current at 25 C | 69 A | |
| Pd - Power Dissipation | 417 W | |
| Minimum Operating Temperature | - 55 C | |
| Maximum Operating Temperature | + 150 C |
| Continuous Collector Current Ic Max | 69 A | |
| Gate-Emitter Leakage Current | 100 nA | |
| Factory Pack QuantityFactory Pack Quantity | 1 | |
| Unit Weight | 1.340411 oz | |
| Packaging | Tube | |
| Configuration | Single | |
| Operating Temperature Range | - 55 C to + 150 C | |
| Continuous Collector Current | 69 A | |
| Height | 5.31 mm | |
| Length | 21.46 mm | |
| Width | 16.26 mm |
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