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APT30GP60BDQ1G Tech Specifications
| Category | Transistors - IGBTs - Single | |
| Manufacturer | Atmel | |
| RoHS | Details | |
| Mounting Styles | Through Hole | |
| Collector- Emitter Voltage VCEO Max | 600 V | |
| Collector-Emitter Saturation Voltage | 2.2 V | |
| Maximum Gate Emitter Voltage | - 20 V, + 20 V | |
| Continuous Collector Current at 25 C | 100 A |
| Pd - Power Dissipation | 463 W | |
| Minimum Operating Temperature | - 55 C | |
| Maximum Operating Temperature | + 150 C | |
| Factory Pack QuantityFactory Pack Quantity | 1 | |
| Unit Weight | 0.208116 oz | |
| Packaging | Tube | |
| Configuration | Single |
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