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APT60GA60JD60 Tech Specifications

Category Transistors - IGBTs - Modules
Manufacturer Atmel
Package / Case SOT-227-4
RoHS Details
Collector- Emitter Voltage VCEO Max 600 V
Collector-Emitter Saturation Voltage 2 V
Continuous Collector Current at 25 C 112 A
Gate-Emitter Leakage Current 100 nA
Pd - Power Dissipation 356 W
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Maximum Gate Emitter Voltage 30 V
Mounting Styles Chassis Mount
Factory Pack QuantityFactory Pack Quantity 1
Tradename POWER MOS 8, ISOTOP
Unit Weight 1.058219 oz
Packaging Tube
Configuration Single
Operating Temperature Range - 55 C to + 150 C
Product IGBT Silicon Modules
Height 9.6 mm
Length 38.2 mm
Width 25.4 mm
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