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ARF463AP1G Tech Specifications
| Category | Transistors - FETs, MOSFETs - RF | |
| Manufacturer | Atmel | |
| Package / Case | TO-247-3 | |
| RoHS | Details | |
| Transistor Polarity | N-Channel | |
| Id - Continuous Drain Current | 9 A | |
| Vds - Drain-Source Breakdown Voltage | 500 V | |
| Minimum Operating Temperature | - 55 C | |
| Maximum Operating Temperature | + 150 C | |
| Mounting Styles | Through Hole | |
| Channel Mode | Enhancement | |
| Fall Time | 4.2 ns | |
| Forward Transconductance - Min | 2 mS |
| Pd - Power Dissipation | 180 W | |
| Factory Pack QuantityFactory Pack Quantity | 1 | |
| Vgs - Gate-Source Voltage | 30 V | |
| Vgs th - Gate-Source Threshold Voltage | 5 V | |
| Unit Weight | 1.340411 oz | |
| Packaging | Tube | |
| Type | RF Power MOSFET | |
| Operating Frequency | 100 MHz | |
| Output Power | 100 W | |
| Rise Time | 4.3 ns | |
| Operating Temperature Range | - 55 C to + 150 C | |
| Gain | 15 dB |
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