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BIDW30N60T Tech Specifications
| Category | Transistors - IGBTs - Single | |
| Manufacturer | Bourns | |
| Mounting Type | Through Hole | |
| Package / Case | TO-247-3 | |
| Supplier Device Package | TO-247 | |
| Mfr | Bourns Inc. | |
| Package | Tube | |
| Product Status | Active | |
| Current-Collector (Ic) (Max) | 60 A | |
| Test Conditions | 400V, 30A, 10Ohm, 15V | |
| Base Product Number | BIDW30N | |
| Maximum Gate Emitter Voltage | ±20V | |
| Package Type | TO-247 | |
| Maximum Collector Emitter Voltage | 600 V | |
| Pd - Power Dissipation | 230 W | |
| Maximum Operating Temperature | + 150 C | |
| Collector-Emitter Saturation Voltage | 1.65 V | |
| Minimum Operating Temperature | - 55 C | |
| Factory Pack QuantityFactory Pack Quantity | 600 | |
| Continuous Collector Current at 25 C | 60 A | |
| Mounting Styles | Through Hole | |
| Manufacturer | Bourns |
| Brand | Bourns | |
| Continuous Collector Current Ic Max | 60 A | |
| RoHS | Details | |
| Collector- Emitter Voltage VCEO Max | 600 V | |
| Series | - | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Packaging | Tube | |
| Subcategory | IGBTs | |
| Technology | Si | |
| Configuration | Single Diode | |
| Input Type | Standard | |
| Power - Max | 230 W | |
| Product Type | IGBT Transistors | |
| Voltage - Collector Emitter Breakdown (Max) | 600 V | |
| Vce(on) (Max) @ Vge, Ic | 1.65V @ 15V, 30A | |
| IGBT Type | Trench Field Stop | |
| Gate Charge | 76 nC | |
| Current - Collector Pulsed (Icm) | 90 A | |
| Td (on/off) @ 25°C | 30ns/67ns | |
| Switching Energy | 1.85mJ (on), 450μJ (off) | |
| Reverse Recovery Time (trr) | 40 ns | |
| Product Category | IGBT Transistors |
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