AT-30511-BLKG Tech Specifications

Category Transistors - Bipolar (BJT) - RF
Manufacturer Broadcom
Factory Lead Time 6 Weeks
Contact Plating Gold
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-253-4, TO-253AA
Number of Pins 4Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 5.5V
Number of Elements 1 Element
Operating Temperature 150°C TJ
Packaging Bulk
Published 2005
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Voltage - Rated DC 5.5V
Max Power Dissipation 100mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 8mA
Frequency 10GHz
Configuration SINGLE
Power Dissipation 100mW
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 10 GHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 5.5V
Max Collector Current 8mA
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 1mA 2.7V
Gain 14dB ~ 16dB
Collector Base Voltage (VCBO) 11V
Emitter Base Voltage (VEBO) 1.5V
Continuous Collector Current 8mA
Noise Figure (dB Typ @ f) 1.1dB ~ 1.4dB @ 900MHz
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
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