AT-30511-TR1G Tech Specifications

Category Transistors - Bipolar (BJT) - RF
Manufacturer Broadcom
Factory Lead Time 6 Weeks
Contact Plating Gold
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-253-4, TO-253AA
Number of Pins 4Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 5.5V
Number of Elements 1 Element
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Voltage - Rated DC 5.5V
Max Power Dissipation 100mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 8mA
Frequency 30GHz
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Configuration SINGLE
Power Dissipation 100mW
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 10 GHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 5.5V
Max Collector Current 8mA
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 1mA 2.7V
Gain 14dB ~ 16dB
Collector Base Voltage (VCBO) 11V
Emitter Base Voltage (VEBO) 1.5V
Continuous Collector Current 8mA
Noise Figure (dB Typ @ f) 1.1dB ~ 1.4dB @ 900MHz
RoHS Status RoHS Compliant
Lead Free Lead Free
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