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AT-31011-TR1G Tech Specifications

Category Transistors - Bipolar (BJT) - RF
Manufacturer Broadcom
Factory Lead Time 6 Weeks
Contact Plating Gold
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-253-4, TO-253AA
Number of Pins 4Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 5.5V
Number of Elements 1 Element
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2017
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Voltage - Rated DC 5.5V
Max Power Dissipation 150mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 16mA
Frequency 10GHz
Configuration SINGLE
Power Dissipation 150mW
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 10 GHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 5.5V
Max Collector Current 16mA
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 1mA 2.7V
Gain 11dB ~ 13dB
Transition Frequency 10000MHz
Collector Base Voltage (VCBO) 11V
Emitter Base Voltage (VEBO) 1.5V
Continuous Collector Current 16mA
Noise Figure (dB Typ @ f) 0.9dB ~ 1.2dB @ 900MHz
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
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