AT-32011-TR1G Tech Specifications

Category Transistors - Bipolar (BJT) - RF
Manufacturer Broadcom
Factory Lead Time 6 Weeks
Mounting Type Surface Mount
Package / Case TO-253-4, TO-253AA
Surface Mount YES
Transistor Element Material SILICON
Current-Collector (Ic) (Max) 32mA
Number of Elements 1 Element
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY, LOW NOISE
HTS Code 8541.21.00.75
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number AT32011
JESD-30 Code R-PDSO-G4
Qualification Status Not Qualified
Configuration SINGLE
Case Connection COLLECTOR
Power - Max 200mW
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 2mA 2.7V
Gain 12.5dB ~ 14dB
Voltage - Collector Emitter Breakdown (Max) 5.5V
Power Dissipation-Max (Abs) 0.2W
Highest Frequency Band ULTRA HIGH FREQUENCY B
Noise Figure (dB Typ @ f) 1dB ~ 1.3dB @ 900MHz
RoHS Status RoHS Compliant
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