AT-32032-BLKG Tech Specifications

Category Transistors - Bipolar (BJT) - RF
Manufacturer Broadcom
Factory Lead Time 6 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 5.5V
Number of Elements 1 Element
Operating Temperature 150°C TJ
Packaging Bulk
Published 2005
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Additional Feature HIGH RELIABILITY
Voltage - Rated DC 5.5V
Max Power Dissipation 200mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 30mA
Frequency 2.4GHz
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number AT32032
Qualification Status Not Qualified
Element Configuration Single
Power Dissipation 200mW
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 5.5V
Max Collector Current 40mA
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 5mA 2.7V
Gain 13.5dB ~ 15dB
Collector Base Voltage (VCBO) 11V
Emitter Base Voltage (VEBO) 1.5V
Continuous Collector Current 40mA
Noise Figure (dB Typ @ f) 1dB ~ 1.3dB @ 900MHz
RoHS Status RoHS Compliant
Lead Free Lead Free
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