AT-41500-GP4 Tech Specifications

Category Transistors - Bipolar (BJT) - RF
Manufacturer Broadcom
Mount Surface Mount
Mounting Type Surface Mount
Package / Case Die
Number of Pins 2Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 12V
Number of Elements 1 Element
Operating Temperature 200°C TJ
Packaging Tray
Published 2009
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Max Power Dissipation 500mW
Terminal Position UPPER
Frequency 8GHz
Configuration SINGLE
Power Dissipation 500mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 8 GHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 12V
Max Collector Current 60mA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 10mA 8V
Gain 8dB ~ 17dB
Transition Frequency 8000MHz
Collector Base Voltage (VCBO) 20V
Emitter Base Voltage (VEBO) 1.5V
Continuous Collector Current 60mA
Noise Figure (dB Typ @ f) 1.4dB ~ 3dB @ 1GHz ~ 4GHz
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Select at least one checkbox above to show similar products in this category.
View Similar

AT-41500-GP4 Documents

Download datasheets and manufacturer documentation for   AT-41500-GP4

AT-41500-GP4 brand manufacturers: Broadcom Limited, Elecinsight stock, AT-41500-GP4 reference price.Broadcom Limited. AT-41500-GP4 parameters, AT-41500-GP4 Datasheet PDF and pin diagram description download.You can use the AT-41500-GP4 Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find AT-41500-GP4 pin diagram and circuit diagram and usage method of function,AT-41500-GP4 electronics tutorials.You can download from the Elecinsight.