AT-41533-BLKG Tech Specifications

Category Transistors - Bipolar (BJT) - RF
Manufacturer Broadcom
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 12V
Number of Elements 1 Element
hFEMin 30
Operating Temperature 150°C TJ
Packaging Bulk
Published 2005
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Voltage - Rated DC 12V
Max Power Dissipation 225mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 50mA
Frequency 10GHz
Base Part Number AT41533
Element Configuration Single
Nominal Supply Current 10mA
Power Dissipation 225mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 10 GHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 12V
Max Collector Current 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 5mA 5V
Gain 9dB ~ 14.5dB
Transition Frequency 10GHz
Max Breakdown Voltage 12V
Collector Base Voltage (VCBO) 20V
Emitter Base Voltage (VEBO) 1.5V
Continuous Collector Current 50mA
Noise Figure (dB Typ @ f) 1dB ~ 1.6dB @ 900MHz ~ 2.4GHz
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
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