ATF-511P8-BLK Tech Specifications

Category Transistors - FETs, MOSFETs - RF
Manufacturer Broadcom
Factory Lead Time 6 Weeks
Contact Plating Tin
Mount Surface Mount
Package / Case 8-WFDFN Exposed Pad
Number of Pins 8Pins
Number of Elements 1 Element
Packaging Bulk
Published 2012
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
Termination SMD/SMT
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Additional Feature LOW NOISE
Voltage - Rated DC 4.5V
Max Power Dissipation 3W
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) 260
Current Rating 1A
Frequency 2GHz
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Configuration SINGLE
Operating Mode ENHANCEMENT MODE
Power Dissipation 3W
Case Connection SOURCE
Current - Test 200mA
Transistor Application AMPLIFIER
Drain to Source Voltage (Vdss) 4.5V
Polarity/Channel Type N-CHANNEL
Transistor Type E-pHEMT
Continuous Drain Current (ID) 1A
Gate to Source Voltage (Vgs) 1V
Gain 14.8dB
Drain Current-Max (Abs) (ID) 1A
Dual Supply Voltage 4.5V
DS Breakdown Voltage-Min 7V
Power - Output 30dBm
FET Technology HIGH ELECTRON MOBILITY
Noise Figure 1.4dB
Nominal Vgs 280 mV
Height 800μm
Length 2.1mm
Width 2.1mm
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
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