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ATF-54143-TR1G Tech Specifications

Category Transistors - FETs, MOSFETs - RF
Manufacturer Broadcom
Factory Lead Time 6 Weeks
Contact Plating Tin
Mount Surface Mount
Package / Case SC-82A, SOT-343
Number of Pins 4Pins
Number of Elements 1 Element
Packaging Tape & Reel (TR)
Published 2001
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Voltage - Rated DC 5V
Max Power Dissipation 725mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 120mA
Frequency 2GHz
Base Part Number ATF-54143
Configuration SINGLE
Operating Mode ENHANCEMENT MODE
Power Dissipation 725mW
Case Connection SOURCE
Current - Test 60mA
Transistor Application AMPLIFIER
Drain to Source Voltage (Vdss) 3V
Polarity/Channel Type N-CHANNEL
Transistor Type pHEMT FET
Continuous Drain Current (ID) 120mA
Gate to Source Voltage (Vgs) 1V
Gain 16.6dB
Drain Current-Max (Abs) (ID) 0.12A
DS Breakdown Voltage-Min 5V
Power - Output 20.4dBm
FET Technology HIGH ELECTRON MOBILITY
Noise Figure 0.5dB
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
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