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ATF-55143-TR1G Tech Specifications

Category Transistors - FETs, MOSFETs - RF
Manufacturer Broadcom
Factory Lead Time 6 Weeks
Mount Surface Mount
Package / Case SC-82A, SOT-343
Contact Plating Tin
Number of Pins 4Pins
Number of Elements 1 Element
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
Termination SMD/SMT
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Voltage - Rated DC 5V
Max Power Dissipation 270mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 100mA
Frequency 2GHz
Base Part Number ATF-55143
Configuration SINGLE
Operating Mode ENHANCEMENT MODE
Power Dissipation 270mW
Case Connection SOURCE
Current - Test 10mA
Transistor Application AMPLIFIER
Drain to Source Voltage (Vdss) 2.7V
Polarity/Channel Type N-CHANNEL
Transistor Type E-pHEMT
Continuous Drain Current (ID) 100mA
Threshold Voltage 370mV
Gate to Source Voltage (Vgs) 1V
Gain 17.7dB
Drain Current-Max (Abs) (ID) 0.1A
Dual Supply Voltage 2.7V
DS Breakdown Voltage-Min 5V
Power - Output 14.4dBm
FET Technology HIGH ELECTRON MOBILITY
Noise Figure 0.6dB
Nominal Vgs 370 mV
Height 1.2mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
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