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ATF-551M4-TR1 Tech Specifications
| Category | Transistors - FETs, MOSFETs - RF | |
| Manufacturer | Broadcom | |
| Mount | Surface Mount | |
| Package / Case | 0505 (1412 Metric) | |
| Number of Pins | 4Pins | |
| Number of Elements | 1 Element | |
| Packaging | Tape & Reel (TR) | |
| Published | 2001 | |
| JESD-609 Code | e4 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 4Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Gold (Au) | |
| Max Operating Temperature | 150°C | |
| Min Operating Temperature | -65°C | |
| Voltage - Rated DC | 5V | |
| Max Power Dissipation | 270mW | |
| Terminal Position | BOTTOM | |
| Peak Reflow Temperature (Cel) | 260 | |
| Current Rating | 100mA | |
| Frequency | 2GHz | |
| Base Part Number | ATF-551M4 |
| Case Code (Metric) | 1412 | |
| Case Code (Imperial) | 0505 | |
| Configuration | SINGLE | |
| Operating Mode | DEPLETION MODE | |
| Power Dissipation | 270mW | |
| Current - Test | 10mA | |
| Transistor Application | AMPLIFIER | |
| Drain to Source Voltage (Vdss) | 5V | |
| Polarity/Channel Type | N-CHANNEL | |
| Transistor Type | pHEMT FET | |
| Continuous Drain Current (ID) | 100mA | |
| Gate to Source Voltage (Vgs) | 1V | |
| Gain | 17.5dB | |
| Drain Current-Max (Abs) (ID) | 0.1A | |
| DS Breakdown Voltage-Min | 5V | |
| Power - Output | 14.6dBm | |
| FET Technology | HIGH ELECTRON MOBILITY | |
| Noise Figure | 0.5dB | |
| Voltage - Test | 2.7V | |
| Radiation Hardening | No | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Contains Lead |
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ATF-551M4-TR1 Documents
Download datasheets and manufacturer documentation for ATF-551M4-TR1
- PCN Obsolescence/ EOLMult Devices EOL 01/Dec/2017
- PCN PackagingMult Devices Packing 25/Apr/2018 Alternate ESD Lock Reel Supplier 24/Jul/2014
- PCN Design/SpecificationPlatform Ceramic 12/Mar/2013
- PCN Assembly/OriginAlt Assembly Site 16/Nov/2016
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