HCNW136-000E Tech Specifications

Category Optoisolators - Transistor, Photovoltaic Output
Manufacturer Broadcom
Factory Lead Time 22 Weeks
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case 8-DIP (0.400, 10.16mm)
Number of Pins 8Pins
Collector-Emitter Breakdown Voltage 20V
Current Transfer Ratio-Min 15% @ 16mA
Number of Elements 1 Element
Operating Temperature -55°C~85°C
Packaging Tube
Published 2004
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 100mW
Approval Agency UL
Lead Pitch 2.54mm
Voltage - Isolation 5000Vrms
Output Voltage 15V
Output Type Transistor with Base
Row Spacing 11 mm
Power Dissipation 100mW
Voltage - Forward (Vf) (Typ) 1.68V
Propagation Delay 2 μs
Input Type DC
Forward Current 25mA
Max Output Voltage 20V
Data Rate 1 Mbps
Output Current per Channel 8mA
Rise Time 600ns
Max Collector Current 8mA
Reverse Breakdown Voltage 3V
Max Input Current 25mA
Input Current 25mA
Turn On / Turn Off Time (Typ) 1μs, 1μs (Max)
Current Transfer Ratio 50 %
Baud Rate 1 Mbaud
Width 11.15mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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