CEL NE662M04-T2-A RF BJT Transistors
3.3V 35mA 35mA
IN STOCK
Min. : 1
Mult. : 1
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NE662M04-T2-A Tech Specifications
| Category | Transistors - Bipolar (BJT) - RF | |
| Manufacturer | CEL | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | SOT-343F | |
| Number of Pins | 4Pins | |
| Collector-Emitter Breakdown Voltage | 3.3V | |
| Number of Elements | 1 Element | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Max Power Dissipation | 115mW | |
| Frequency | 2GHz | |
| Base Part Number | NE662 | |
| Power Dissipation | 115mW | |
| Output Power | 115mW |
| Gain Bandwidth Product | 25 GHz | |
| Transistor Type | NPN | |
| Collector Emitter Voltage (VCEO) | 3.3V | |
| Max Collector Current | 35mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 5mA 2V | |
| Gain | 18dB | |
| Max Breakdown Voltage | 3.3V | |
| Collector Base Voltage (VCBO) | 15V | |
| Emitter Base Voltage (VEBO) | 1.5V | |
| Continuous Collector Current | 35mA | |
| Noise Figure (dB Typ @ f) | 1.1dB @ 2GHz | |
| Height | 590μm | |
| Length | 2mm | |
| Width | 1.25mm | |
| Radiation Hardening | No | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |
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NE662M04-T2-A Documents
Download datasheets and manufacturer documentation for NE662M04-T2-A
- DatasheetsNE662M04-T2-A-CEL-datasheet-26905.pdf
- PCN Obsolescence/ EOLEOL 12/Aug/2016 EOL Revision 10/Nov/2016
- PCN Assembly/OriginWafer Fab Transfer 25/Feb/2015
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