NE663M04-T2-A Tech Specifications

Category Transistors - Bipolar (BJT) - RF
Manufacturer CEL
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-343F
Number of Pins 4Pins
Collector-Emitter Breakdown Voltage 3.3V
Number of Elements 1 Element
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 190mW
Frequency 15GHz
Element Configuration Single
Power Dissipation 190mW
Output Power 190mW
Transistor Type NPN
Collector Emitter Voltage (VCEO) 3.3V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 10mA 2V
Gain 14dB
Collector Base Voltage (VCBO) 15V
Emitter Base Voltage (VEBO) 1.5V
Continuous Collector Current 100mA
Noise Figure (dB Typ @ f) 1.2dB @ 2GHz
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
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