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NE68133-T1B-R34-A Tech Specifications

Category Transistors - Bipolar (BJT) - RF
Manufacturer CEL
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Collector-Emitter Breakdown Voltage 10V
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 200mW
Base Part Number NE68133
Element Configuration Single
Output Power 200mW
Transistor Type NPN
Max Collector Current 65mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 20mA 8V
Gain 13dB
Frequency - Transition 9GHz
Noise Figure (dB Typ @ f) 1.2dB @ 1GHz
RoHS Status RoHS Compliant
Lead Free Lead Free
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NE68133-T1B-R34-A Documents

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